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Sharma Sarita Devi,Bayikadi Khasimsaheb,Raman Sankar,Neeleshwar Sonnathi 한국물리학회 2022 Current Applied Physics Vol.40 No.-
In this work, an economical, surfactant-free and scalable solution synthesis method at room temperature for selfdecorated copper selenide (Cu2-xSe) nanosheets is reported. Structural and morphological characterizations clearly revealed the formation of single cubic phase Cu2-xSe nanosheets in nearly stoichiometric ratio. The tentative mechanism for fabrication of self-decorated Cu2-xSe nanosheets was proposed. Furthermore, nanostructured bulk Cu2-xSe by hot pressing was explored for thermoelectric performance. High electrical conductivity (1.1 × 105 S/m), moderate Seebeck coefficient (87 μV/K) and low thermal conductivity (1.11 W/mK) at 753 K were obtained. The figure of merit (ZT) ~ 0.56 and power factor (PF) ~ 860 μW/mK2 at 753 K showed better performance than some reported Cu2-xSe nanostructured or bulk counterparts under same temperature. Also, theoretically device ZT ~0.16 and efficiency up to 3% could be achieved. The results indicate that this green and novel synthesis process is an alternative to other reported time or energy consuming processes.
Duvjir, Ganbat,Choi, Byoung Ki,Jang, Iksu,Ulstrup, Søren,Kang, Soonmin,Thi Ly, Trinh,Kim, Sanghwa,Choi, Young Hwan,Jozwiak, Chris,Bostwick, Aaron,Rotenberg, Eli,Park, Je-Geun,Sankar, Raman,Kim, Ki-Seo American Chemical Society 2018 NANO LETTERS Vol.18 No.9
<P>Emergent phenomena driven by electronic reconstructions in oxide heterostructures have been intensively discussed. However, the role of these phenomena in shaping the electronic properties in van der Waals heterointerfaces has hitherto not been established. By reducing the material thickness and forming a heterointerface, we find two types of charge-ordering transitions in monolayer VSe<SUB>2</SUB> on graphene substrates. Angle-resolved photoemission spectroscopy (ARPES) uncovers that Fermi-surface nesting becomes perfect in ML VSe<SUB>2</SUB>. Renormalization-group analysis confirms that imperfect nesting in three dimensions universally flows into perfect nesting in two dimensions. As a result, the charge-density wave-transition temperature is dramatically enhanced to a value of 350 K compared to the 105 K in bulk VSe<SUB>2</SUB>. More interestingly, ARPES and scanning tunneling microscopy measurements confirm an unexpected metal-insulator transition at 135 K that is driven by lattice distortions. The heterointerface plays an important role in driving this novel metal-insulator transition in the family of monolayer transition-metal dichalcogenides.</P> [FIG OMISSION]</BR>