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[REGULAR PAPERS] High Dose 60Co r-Ray Irradiation of W/GaN Schottky Diodes
Jihyun Kim,F.Ren,D.Schoenfeld,S.J.Pearton,A.G.Baca,R.D.Briggs 대한전자공학회 2004 Journal of semiconductor technology and science Vol.4 No.2
W/n-GaN Schottky diodes were irradiated with 6UCO y-rays to doses up to 315Mrad. The barrier height obtained from current-voltage (1- V) measurements showed minimal change from its estimated initial value of -O.4eV over this dose range, though both forward and reverse I-V characteristics show evidence of defect center introduction at doses as low as 150 Mrad. Post irradiation annealing at 500°C increased the reverse leakage current, suggesting migration and complexing of defects. The W/GaN interface is stable to high dose of y-rays, but Au/Ti overlayers employed for reducing contact sheet resistance suffer from adhesion problems at the highest doses.
Hyperfine structure of Sc@C<sub>82</sub> from ESR and DFT
Morley, G W,Herbert, B J,Lee, S M,Porfyrakis, K,Dennis, T J S,Nguyen-Manh, D,Scipioni, R,van Tol, J,Horsfield, A P,Ardavan, A,Pettifor, D G,Green, J C,Briggs, G A D IOP Pub 2005 Nanotechnology Vol.16 No.11
<P>The electron spin <I>g</I>-?and hyperfine tensors of the endohedral metallofullerene Sc@C<SUB>82</SUB> are anisotropic. Using electron spin resonance (ESR) and density functional theory (DFT), we can relate their principal axes to the coordinate frame of the molecule, finding that the <I>g</I>-tensor is not axially symmetric. The Sc bond with the cage is partly covalent and partly ionic. Most of the electron spin density is distributed around the carbon cage, but 5% is associated with the scandium d<SUB><I>yz</I></SUB> orbital, and this drives the observed anisotropy. </P>
Custodian-based information sharing
Jacobson, V.,Braynard, R. L.,Diebert, T.,Mahadevan, P.,Mosko, M.,Briggs, N. H.,Barber, S.,Plass, M. F.,Solis, I.,Uzun, E.,Byoung-Joon Lee,Myeong-Wuk Jang,Dojun Byun,Smetters, D. K.,Thornton, J. D. IEEE 2012 IEEE communications magazine Vol.50 No.7
<P>Information sharing systems such as iCloud, Dropbox, Facebook, and Twitter are ubiquitous today, but all of them depend on massive server infrastructure and always-on Internet connectivity. We have designed and implemented a sharing system that does not require infrastructure yet supports robust, distributed, secure sharing by opportunistically using any and all connectivity, local or global, permanent or transient, to communicate. One key element of this system is a new information routing model that so far has proven to be as scalable and efficient as the best of the current Internet routing protocols, while operating in an environment more complex and dynamic than they can tolerate. The new routing model is made possible by new affordances offered by information-centric networking, in particular, the open source CCN [1] release. This article describes the new system and its routing model, and provides some performance measurements.</P>
High Dose $^{60}Co\;{\gamma}$-Ray Irradiation of W/GaN Schottky Diodes
Kim, Jihyun,Ren, F.,Schoenfeld, D.,Pearton, S.J.,Baca, A.G.,Briggs, R.D. The Institute of Electronics and Information Engin 2004 Journal of semiconductor technology and science Vol.4 No.2
W/n-GaN Schottky diodes were irradiated with $^{60}Co\;{\gamma}-rays$ to doses up to 315Mrad. The barrier height obtained from current-voltage (I-V) measurements showed minimal change from its estimated initial value of ${\sim}0.4eV$ over this dose range, though both forward and reverse I-V characteristics show evidence of defect center introduction at doses as low as 150 Mrad. Post irradiation annealing at $500^{\circ}C$ increased the reverse leakage current, suggesting migration and complexing of defects. The W/GaN interface is stable to high dose of ${\gamma}-rays$, but Au/Ti overlayers employed for reducing contact sheet resistance suffer from adhesion problems at the highest doses.