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Carbon enhanced blue-violet luminescence in ZnO films grown by pulsed laser deposition
R.J. Mendelsberg,J. Kennedy,S.M. Durbin,R.J. Reeves 한국물리학회 2008 Current Applied Physics Vol.8 No.3,4
samples were all deposited onc-axis sapphire at dierent ambient oxygen pressures. They were then characterized using ellipsometry,atomic-force microscopy (AFM), photoluminescence (PL) spectroscopy, Rutherford backscattering spectroscopy (RBS), and nuclearreaction analysis (NRA).Along with the characteristic band-edge (3.36 eV) and deep level (2.3 eV) PL features, strong blue/violet emissions around 3 eV werealso observed and are generally attributed to zinc vacancies and zinc interstitials. NRA reveals carbon impurities in all samples and theintroduction of more carbon impurities enhanced the blue/violet emissions and inhibited the green luminescence. It is concluded that thecarbon impurities promote the zinc related native defects in ZnO and may also be radiative centers in the violet part of the spectrum.
J. Kennedy,A. Markwitz,Z. Li, W. Gao,C. Kendrick,S.M. Durbin,R. Reeves 한국물리학회 2006 Current Applied Physics Vol.6 No.3
The electrical conductivity of ZnO lms deposited on Si by the RF sputtering technique were modied by low-energy hydrogen· 1016 to 1.0· 1017 ions cm. 2.High resolution quantitative hydrogen depth proles of the un-doped and doped samples were measured non-destructively with elasticrecoil detection analysis using a nely focussed 2.5 MeV4He+ ion beam impinging onto the samples at 20.surements were carried out on the lms by SEM, XRD and Hall probe measurements to explore the eects of hydrogen implantation. Itwas observed that the electrical conductivity is decreased by as much as an order of magnitude after hydrogen implantation. The lmsremained polycrystalline after implantation. The results suggest that reducing the n-type conductivity using low-energy hydrogen implan-tation without annealing may provide a pathway for passivating the donors for a possible subsequent formation of p-type acceptors byion implantation.
Characterisation of polycrystalline gallium nitride grown by plasma-assisted evaporation
S. M. Durbin,V. J. Kennedy,S. I. Liem,R. J. Reeves,A. Markwitz,V. A. Christie 한국물리학회 2004 Current Applied Physics Vol.4 No.2-4
The remarkable success of GaN-based devices despite comparatively large defect densities has prompted many groups to explorepolycrystalline and amorphous GaN thin lms for various device applications. In this paper we present the results of a series of lmgrowths performed using an RF plasma assisted molecular beam epitaxy system. GaN lms were grown on quartz substrates in thetemperature range of 150650.C, and in all cases were found to be polycrystalline and largelyc-axis oriented. Rutherford back-scattering spectroscopy indicates lms have gallium-rich stoichiometry, except for those grown below 200.C. Bandedge photo-luminescence was observed at room temperature even for the lms grown at 150.C, and many lms exhibited a measurable changein resistivity under exposure to ultraviolet radiation.
Silva, M.,Daheron, L.,Hurley, H.,Bure, K.,Barker, R.,Carr, Andrew J.,Williams, D.,Kim, H.W.,French, A.,Coffey, Pete J.,Cooper-White, Justin J.,Reeve, B.,Rao, M.,Snyder, Evan Y.,Ng, Kelvin S.,Mead, Ben Cell Press 2015 Cell stem cell Vol.16 No.1
Induced pluripotent stem cells (iPSCs) have the potential to transform drug discovery and healthcare in the 21<SUP>st</SUP> century. However, successful commercialization will require standardized manufacturing platforms. Here we highlight the need to define standardized practices for iPSC generation and processing and discuss current challenges to the robust manufacture of iPSC products.