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Review on Cu2SnS3, Cu3SnS4, and Cu4SnS4 thin films and their photovoltaic performance
Vasudeva Reddy Minnam Reddy,Mohan Reddy Pallavolu,Phaneendra Reddy Guddeti,Sreedevi Gedi,Kishore Kumar Yarragudi Bathal Reddy,Babu Pejjai,김우경,Thulasi Ramakrishna Reddy Kotte,박진호 한국공업화학회 2019 Journal of Industrial and Engineering Chemistry Vol.76 No.-
The rapid progress on the Cu–Sn–S (Cu2SnS3, Cu3SnS4, and Cu4SnS4) solar cells has opened a new avenueto generate the electrical energy at ultra-low-cost. Therefore, the progress in the deposition of Cu2SnS3,Cu3SnS4, and Cu4SnS4 thinfilms by various chemical and physical methods is reviewed comprehensively. This article briefly describes (i) the phase diagrams of Cu–Sn–S, (ii) the bulk properties of Cu2SnS3,Cu3SnS4, and Cu4SnS4, (iii) the effect of deposition conditions on the phase formation, (iv) the physicalproperties of Cu2SnS3, Cu3SnS4, and Cu4SnS4 thinfilms, and (v) the photovoltaic performance of Cu2SnS3,Cu3SnS4, and Cu4SnS4 solar cells.
Influence of deposition temperature on the efficiency of SnS solar cells
Gedi, Sreedevi,Minnam Reddy, Vasudeva Reddy,Alhammadi, Salh,Reddy Guddeti, Phaneendra,Kotte, Tulasi Ramakrishna Reddy,Park, Chinho,Kim, Woo Kyoung Elsevier Science B.V., Amsterdam. 2019 SOLAR ENERGY -PHOENIX ARIZONA THEN NEW YORK- Vol.184 No.-
<P><B>Abstract</B></P> <P>In this paper, studies on the photovoltaic performance of the orthorhombic SnS device with respect to bath temperature are reported. Firstly, the effect of bath temperature on the physical properties of SnS layers was analyzed using appropriate characterization techniques. The deposited films exhibited an orthorhombic crystal structure with an intense (1 1 1) reflection of SnS. The band gap of 1.3 eV for good solar radiation absorption and a minimum value of electrical resistivity of 38 Ω-cm for easy carrier transport were obtained at 70 °C. In addition, the films had compact morphology with uniformly distributed large grains of approximately 220 nm. Finally, the optimal SnS absorber exhibited a high efficiency of 0.94%. This work gives a new insight into the efficient deposition of SnS solar absorbers with low material wastage and low environmental pollution.</P> <P><B>Highlights</B></P> <P> <UL> <LI> SnS films prepared by cost effective technique CBD. </LI> <LI> Bath temperature was optimized for PV absorber. </LI> <LI> Single phase orthorhombic SnS films with good morphology were prepared. </LI> <LI> SnS solar cell showed a conversion efficiency of 0.94%. </LI> <LI> The efficiency of present device is higher than reported CBD SnS (Orthorhombic)-devices. </LI> </UL> </P> <P><B>Graphical abstract</B></P> <P>[DISPLAY OMISSION]</P>