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Byun, Young-Chul,Choi, Sungho,An, Youngseo,McIntyre, Paul C,Kim, Hyoungsub American Chemical Society 2014 ACS APPLIED MATERIALS & INTERFACES Vol.6 No.13
<P>We investigated ZnO surface passivation of a GaAs (100) substrate using an atomic layer deposition (ALD) process to prepare an ultrathin ZnO layer prior to ALD-HfO2 gate dielectric deposition. Significant suppression of both Ga-O bond formation near the interface and As segregation at the interface was achieved. In addition, this method effectively suppressed the trapping of carriers in oxide defects with energies near the valence band edge of GaAs. According to electrical analyses of the interface state response on p- and n-type GaAs substrates, the interface states in the bottom half of the GaAs band gap were largely removed. However, the interface trap response in the top half of the band gap increased somewhat for the ZnO-passivated surface.</P>
Spontaneous, Defect-Free Kinking via Capillary Instability during Vapor–Liquid–Solid Nanowire Growth
Li, Yanying,Wang, Yanming,Ryu, Seunghwa,Marshall, Ann F.,Cai, Wei,McIntyre, Paul C. American Chemical Society 2016 Nano letters Vol.16 No.3
<P>Kinking, a common anomaly in nanowire (NW) vapor-liquid-solid (VLS) growth, represents a sudden change of the wire's axial growth orientation. This study focuses on defect-free kinking during germanium NW VLS growth, after nucleation on a Ge (111) single crystal substrate, using Au-Ge catalyst liquid droplets of defined size. Statistical analysis of the fraction of kinked NWs reveals the dependence of kinking probability on the wire diameter and the growth temperature. The morphologies of kinked Ge NWs studied by electron microscopy show two distinct, defect-free, kinking modes, whose underlying mechanisms are explained with the help of 3D multiphase field simulations. Type I kinking, in which the growth axis changes from vertical [111] to < 110 >, was observed in Ge NWs with a nominal diameter of similar to 20 nm. This size coincides with a critical diameter at which a spontaneous transition from < 111 > to < 110 > growth occurs in the phase field simulations. Larger diameter NWs only exhibit Type II kinking, in which the growth axis changes from vertical [111] directly to an inclined < 111 > axis during the initial stages of wire growth. This is caused by an error in sidewall facet development, which produces a shrinkage in the area of the (111) growth facet with increasing NW length, causing an instability of the Au-Ge liquid droplet at the tip of the NW.</P>
Chen, Han-Ping,Yuan, Yu,Yu, Bo,Ahn, Jaesoo,McIntyre, Paul C.,Asbeck, Peter M.,Rodwell, Mark J. W.,Taur, Yuan IEEE 2012 IEEE transactions on electron devices Vol.59 No.9
<P>This paper presents a detailed analysis of the multifrequency capacitance–voltage and conductance–voltage data of <TEX>$\hbox{Al}_{2}\hbox{O}_{3}/\hbox{n-InGaAs}$ </TEX> MOS capacitors. It is shown that the widely varied frequency dependence of the data from depletion to inversion can be fitted to various regional equivalent circuits derived from the full interface-state model. In certain regions, incorporating bulk-oxide traps in the interface-state model enables better fitting of data. By calibrating the model with experimental data, the interface-state density and the trap time constants are extracted as functions of energy in the bandgap, from which the stretch-out of gate voltage is determined. It is concluded that the commonly observed decrease of the 1-kHz capacitance toward stronger inversion is due to the increasing time constant for traps to capture majority carriers at the inverted surface.</P>