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RISS 인기검색어
- 검색키워드
- 저자 : Pankaj Misra (검색결과 3 건)
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C.Sanjeeviraja,M.Jayachandran,K.Sankaranarayanan,Pankaj Misra,L.M.Kukreja,K.Ramamoorthy 한국물리학회 2004 Current Applied Physics Vol.4 No.6
Intrinsic epitaxial zinc oxide (epi-ZnO) thin lms were grown by laser-molecular beam epitaxy (L-MBE), i.e., pulsed laserdeposition (PLD) technique using Johnson Matthey ‘‘specpure’’-grade ZnO pellets. The eects of substrate temperatures on ZnOthin lm growth, electrical conductivity (r), mobility (l ) and carrier concentration (n) were studied. As well as the feasibility ofdeveloping high quality conducting oxide thin lms was also studied simultaneously. The highest conductivity was found foroptimized epi-ZnO thin lms isr ¼ 0:06 . 103 ohm. 1 cm. 1 (n-type) (which is almost at the edge of semiconductivity range), carrierdensityn ¼ 0:316 . 1019 cm. 3 and mobility l ¼ 98 cm2/Vs. The electrical studies further conrmed the semiconductor charac-teristics of epi-n-ZnO thin lms. The relationship between the optical and electrical properties were also graphically enumerated.The electrical parameter values for the lms were calculated, graphically enumerated and tabulated. As a novelty point of view, wehave concluded that without doping and annealing, we have obtained optimum electrical conductivity with high optical trans-parency (P 95%) for as deposited ZnO thin lms using PLD. Also, this is the rst time that we have applied PLD made ZnO thinlms to iso-, hetero-semiconductorinsulatorsemiconductor (SIS) type solar cells as transparent conducting oxide (TCO) windowlayer. We hope that surely these data be helpful either as a scientic or technical basis in the semiconductor processing
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Valence and conduction band offset measurements in Ni0.07Zn0.93O/ZnO heterostructure
Tanveer Ahmad Dar,Arpana Agrawal,Pankaj Misra,Lalit M. Kukreja,Pranay Kumar Sen,Pratima Sen 한국물리학회 2014 Current Applied Physics Vol.14 No.2
We report valence and conduction band offset measurements in a pulsed laser deposited Ni0.07Zn0.93O/ ZnO heterostructure using X-ray photoelectron spectroscopy, valence band spectroscopy and ultraviolet visible spectroscopy. Neglecting the strain effect, the valence band offset was estimated to be 0.32 eV and the conduction band offset comes out to be 0.23 eV. Ratio between conduction band and valence band offset is 0.72. Core level shifting due to Ni doping has also been explained. Magnetotransport study of Ni0.07Zn0.93O film reveals that the charge carriers might be spin polarized at the interface of the heterojunction.
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Development of a novel high optical quality ZnO thin films by PLD for III-V opto-electronic devices
K. Ramamoorthy,C. Sanjeeviraja,M. Jayachandran,K. Sankaranarayanan,Pankaj Misra,L.M. Kukreja 한국물리학회 2006 Current Applied Physics Vol.6 No.1
pulsed laser deposition (PLD) technique using Johnson Matthey ‘‘specpure’’- grade ZnO pellets. The eects of substrate tempera-tures on zinc oxide thin lm growth, optical transmission, absorption, reection and photoluminescence properties were studied. Aswell as the feasibility of developing high quality transparent oxide thin lms was also studied simultaneously. The optical transmis-sion window of such obtained lms, i.e.,T% (max) P 95% is broader than those of other transparent conducting oxides such asto emphasize as a interesting, signicant and novel physical eect that the average optical transmittance of ZnO thin lms rivals thatof the most transmittive TCO lms reported to date for this conductivity level (of the order of 103 X. 1 cm. 1). Also this is the rsttime that we have applied these PLD prepared ZnO thin lms to iso and hetero semiconductorinsulatorsemiconductor (SIS) typereective coatings. From photoluminescence study, we conrmed the purity and high electrical conductivity of the deposited thinlms of ZnO. The optical parameter values for the lms were calculated, tabulated and graphically emphasized. Supplementarystudies on surface, electrical, structural and internal morphological properties of zinc oxide thin lm growth correlated with opticaltransmission, absorption, reection and photoluminescence properties gives added advantages to this work. We hope that surelythese data should be helpful either as a scientic or technical basis in the semiconductor processing and technology.
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