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Palei, Srikanta,Parida, Bhaskar,Choi, Jaeho,Kim, Keunjoo American Scientific Publishers 2016 Journal of Nanoscience and Nanotechnology Vol.16 No.10
<P>We investigated mosaic Si solar cells formed by e-beam deposited GaAs and ITO thin films. The mosaic structure in the nanotextured cell was formed by two parallel junctions of n-Si/ITO and n-Si/n-GaAs/ITO. In general, area of the nanotextured Si surface is very large and the loss of electrons is dominant at the surface. The nanotextured mosaic structure enhanced the surface passivation and the interfacial conduction of electrons. The mosaic cells also showed low photoreflectance in the visible/IR region. Quantum efficiencies of the nanotextured mosaic cells were lower than that of the microtextured mosaic cell, but the quantum efficiencies of the all cells were enhanced at 860 nm due to the presence of GaAs. The nanotextured mosaic cells showed the enhanced fill-factors and conversion efficiencies compared to the microtextured mosaic cell.</P>
Kumar, Vivekanand,Palei, Sanjay K.,Karmakar, Netai C.,Chaudhary, Dhanjee K. Occupational Safety and Health Research Institute 2022 Safety and health at work Vol.13 No.1
Background: Whole-body vibration (WBV) exposure of coal mine dumper operators poses numerous health hazards. The case-control study was aimed at assessing the relative musculoskeletal health risk of dumper operators' exposure to WBV with reference to the nonexposed group. Methods: Measurements of WBV exposure were taken at the operator-seat interface using a human vibration analyzer for 110 dumper operators in three coal mines. This vibration measurement was supplemented by a questionnaire survey of 110 dumper operators exposed to WBV and an equal number of workers not exposed to WBV. The relative risk of musculoskeletal disorders (MSDs) has been assessed through the case-control study design. Results: ISO guidelines were used to compare the health risk. It was observed that the prevalence of pain in the lower back was 2.52 times more in the case group compared to the control group. The case group of Mine-2 was 2.0 times more prone to vibration hazards as compared to Mine-3. Conclusion: The case group is more vulnerable to MSDs than the control group. The on-site measurement as well as the response of the dumper operators during the questionnaire survey corroborates this finding.
Formation of Nanopyramidal Structures on Microtextured Si Surfaces for Solar Cell Application
Parida, Bhaskar,Palei, Srikanta,Choi, Jaeho,Kim, Keunjoo American Scientific Publishers 2016 Journal of Nanoscience and Nanotechnology Vol.16 No.10
<P>We investigated the fabrication of nanopyramidal structures on microtextured Si solar cells by metal-assisted chemical and alkaline etching methods. Uniform nanoporous structures were formed on the surface of the microtextured Si solar cell sample. The depth of the nanopores was increased from 100 to 450 nm with increasing the etching time from 30 to 120 sec. The deep nanopores after alkaline etching were converted to dense nanopyramidal structures surrounding the micropyramids of the Si solar cell sample. The sizes of the nanopyramids depend on the depth of the nanopores. The dense nanopyramidal structures with SiNx coating has lower photoreflectance of 1.3% in the wavelength of 400 similar to 800 nm than the reference and the nanotextured samples. The high minority carrier lifetime of the sample with nanopyramid structures indicates that the Auger recombination and the surface recombination are minimized due to the low surface area and large opening of the nanopyramids.</P>
Schottky-type edge passivation of silicon solar cells
Choi, J.,Parida, B.,Palei, S.,Kim, K. North-Holland ; Elsevier Science Ltd 2017 Solar energy materials and solar cells Vol.159 No.-
We investigated Schottky-type edge passivation of Si solar cells using Ag nanodots and the enhancement of cell conversion efficiency by improving the fill factor. The threshold voltage for the termination of photocurrent is increased by about 0.13V compared to the reference sample without edge passivation. The cross-section of the pn junction depletion region forms an Ag/Si Schottky contact in the depletion layer of the space and the image charges with a width of about 28nm. However, the p- and n-electrodes form Ohmic contacts with a contact depletion width of less than 5nm for the carrier tunneling process. The edge Schottky contact reduces the carrier recombination and saturation current at the surrounding edge region and enhances the fill factor and the pn junction property with increased shunt resistance, indicating that metallic edge passivation is an important process for large-scale Si solar cell fabrication.