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Fabrication and electrical characterization of Au/p-Si/STO/Au contact
R.K. Gupta,K. Ghosh,P.K. Kahol 한국물리학회 2009 Current Applied Physics Vol.9 No.5
Au/STO/p-Si/Au structure is fabricated using pulsed laser deposition technique at room temperature. The current–voltage (I–V) characteristics of the device show rectification behavior. Various junction parameters such as ideality factor, barrier height and series resistance is determined using conventional forward bias I–V characteristics, Cheung method and Norde’s function. Au/STO/p-Si/Au structure shows non-ideal diode characteristics with the value of ideality factor of ~ 5.1 and barrier height of ~ 0.40 eV.
R.K. Gupta,K. Ghosh,R. Patel,S.R. Mishra,P.K. Kahol 한국물리학회 2009 Current Applied Physics Vol.9 No.3
Highly conducting and transparent aluminum doped CdO thin films were deposited using pulsed laser deposition technique. The effect of growth temperature on structural, electrical, and optical properties was studied. It is observed that the film orientation changes from preferred (111) plane to (200) plane with increase in growth temperature. The electrical resistivity of the films was found to increase with increase in growth temperature. The low resistivity of 4.3 × 10-5 Ωcm and high transparency (~85%) was obtained for the film grown at 150 ℃. The band gap of the films varies from 2.74 eV to 2.84 eV.