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Preparation of IrO2 Thin Films by MOCVD Using Ir(EtCp)(CHD)
H. Fujisawa,S. Watari,H. Niu,M. Shimizu,N. Oshima 한국물리학회 2005 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.46 No.1
We report on MOCVD of IrO2 thin lms by using liquid Ir precursor, Ir(EtCp)(CHD). IrO2 lms were successfully grown on SiO2/Si, Ti/SiO2/Si and Pb(Zr,Ti)O3/Pt/SiO2/Si at 400C and oxygen concentration of as high as 77 %. IrO2 lms prepared on SiO2/Si with and without surfaceoxidizedIr seeds exhibited an electrical resistivity of 103 cm, and a root-mean-square surface roughness of 5 nm. IrO2 lms showed step coverages of 40-50%on SiO2-stepped substrate with L/S (line and space) of 0.7/3.6 and 1.4/2.9 m.