http://chineseinput.net/에서 pinyin(병음)방식으로 중국어를 변환할 수 있습니다.
변환된 중국어를 복사하여 사용하시면 됩니다.
MULTI-ITEM SHELF-SPACE ALLOCATION OF BREAKABLE ITEMS VIA GENETIC ALGORITHM
MAITI, MANAS KUMAR,MAITI, MANORANJAN 한국전산응용수학회 2006 Journal of applied mathematics & informatics Vol.20 No.1
A general methodology is suggested to solve shelf-space allocation problem of retailers. A multi-item inventory model of breakable items is developed, where items are either complementary or substitute. Demands of the items depend on the amount of stock on the showroom and unit price of the respective items. Also demand of one item decreases (increases) due to the presence of others in case of substitute (complementary) product. For such a model, a Contractive Mapping Genetic Algorithm (CMGA) has been developed and implemented to find the values of different decision variables. These are evaluated to have maximum possible profit out of the proposed system. The system has been illustrated numerically and results for some particular cases are derived. The results are compared with some other heuristic approaches- Simulated Annealing (SA), simple Genetic Algorithm (GA) and Greedy Search Approach (GSA) developed for the present model.
Reshmi Maity,N. P. Maity,K. Srinivasa Rao,Girija Sravani,K. Guha,S. Baishya 한국전기전자재료학회 2019 Transactions on Electrical and Electronic Material Vol.20 No.5
This paper models the fringing fi eld eff ects in a capacitive micromachined ultrasonic transducer (CMUT) structure for determining the sensitivity of the device. CMUT is used as a medical imaging component which can be an important module for sustainable healthcare system. The capacitance value of the device is evaluated based on Younes Ataiiyan’s method. To determine the equivalent capacitance of the device, the capacitances of the membrane, gap and silicon nitride insulating layer are associated in series. Mason’s modeling techniques are used to evaluate the membrane displacement. Circular membrane approximation model has been considered. Eff ects of the variation in membrane thickness, gap separation, and membrane radius on membrane displacement are investigated. The analytical prediction has been validated with the finite element method simulation results through PZFlex. Three dimensional modeling is carried out to accurately capture the characteristic behavior of the device. The agreements of both results are excellent which verifi es that fringing field effects exist in the device operation.
Reshmi Maity,N. P. Maity,Srinivasa Rao Karumuri,Girija Sravani,K. Guha 한국전기전자재료학회 2021 Transactions on Electrical and Electronic Material Vol.22 No.6
The output acoustic energy of a capacitive micromachined ultrasonic transducer (CMUT) can be enhanced by adjusting its membrane structure. In this paper three dissimilar membranes shapes of CMUT: circular, rectangular and hexagonal, were aimed and 3D finite element method simulated using adaptive meshing technique. The displacement as well as strain and stress outputs for a single membrane and an array of four membranes on a single substrate were obtained. The simulated results are supported by analytical modeling. A static bias of 40 V and a signal of amplitude 100 mV are employed. A pressure of 8603.98 N/m 2 resulting in a force of 16.894 μN was applied at the membrane. Fixtures were provided on every possible face of the structure except the face 1 (membrane). The outcomes showed that the membrane displacement is highest for a circular geometry under same uniform pressure and area of vibration. Moreover as the distance between the elemental membranes increases the displacement decreases for circular and hexagonal membranes while the reverse behavior is observed for rectangular membranes.
N. P. Maity,Reshmi Maity,Subir Dutta,Subhasish Deb,K. Girija Sravani,K. Srinivasa Rao,S. Baishya 한국전기전자재료학회 2020 Transactions on Electrical and Electronic Material Vol.21 No.3
Surface potential and drain current models for a physically based double halo metal–oxide–semiconductor-fi eld-eff ect-transistor(MOSFET) are reported. The proposed models have been established in sub-threshold mode of MOSFET operation. The depletion layer depth used in the pseudo two dimensional Poisson’s equation comprises the effect of two symmetrical pocket implantations at both the ends of the channel region. In this effort, improvement in the investigation is brought in by taking lateral asymmetric channel owing to non-uniform doping. The conventional silicon-dioxide (SiO2) material is replaced with a promising high-k dielectric material hafnium oxide (HfO2) to analyze the surface potential and drain current models. Analytical results have been compared using Synopsys technology computer aided design (TCAD). Excellent conformities between the analytical models and simulations are observed.
Ch. Gopichand,Reshmi Maity,N. P. Maity,K. Srinivasa Rao,Koushik Guha,Santanu Maity,Ameen Eisnawi 한국전기전자재료학회 2020 Transactions on Electrical and Electronic Material Vol.21 No.4
This paper presents the design and simulation of Cantilever type RF-MEMS Capacitive shunt switch with meanders and perforations. The main objective of this paper is to reduce the pull-in voltage and increases isolation of the proposed switch. Electro-mechanics and Solid-mechanics are used to simulate the proposed switch by using COMSOL Multiphysics software. The capacitance, switching time, stress analysis are calculated and compare both theoretical and simulation results of the proposed switch. By varying diff erent beam thickness, materials, an air gap between the beam and signal line to calculate spring constant and pull-in voltage. The proposed switch having pull-in voltage is 1.371 V, the dielectric material Si 3 N 4 is to improve the capacitance analysis of the switch. The up and downstate capacitance is 7.073 fF, 1.259 pF. The RF performance is simulated by using Ansoft HFSS tool, the switch performs at low frequencies at 1–4 GHz range. The return (S 11 ) and insertion loss (S 12 ) of the proposed switch is − 30 dB, − 0.0516 dB and the switch having good isolation (S 21 ) is − 37.5 dB at 1.5 GHz frequency. The switch is suitable for radar and satellite communication applications.
Low Pull-in-Voltage RF-MEMS Shunt Switch for 5G Millimeter Wave Applications
P. Ashok Kumar,K. Srinivasa Rao,B. Balaji,M. Aditya,N. P. Maity,Reshmi Maity,Santanu Maity,Ameen El Sinawi,Koushik Guha,K. Girija Sravani 한국전기전자재료학회 2021 Transactions on Electrical and Electronic Material Vol.22 No.6
RF MEMS switches have been employed in many commercial and defense applications due to their high potentiality at microwave and millimeter wave frequencies. In this paper, an RF MEMS shunt switch is designed with perforations and without perforations and simulated using iterative meanders for millimeter wave 5G applications. The proposed iterative meander offers a low spring-constant of 0.68 N/m and reduces the pull-in-voltage upto 1.8 V. The proposed perforated switch design is more reliable which operates with less transition time of 11.2 μs with a quality factor of 1.69. The switch possesses high capacitance ratio of 63. During ON condition, the switch shows low insertion loss of − 0.24 dB at 41 GHz and high isolation of − 46.7 dB at 38 GHz. The performance of the switch is analyzed by simulating it using COMSOL Multiphysics 5.2v (FEM tool). The obtained simulation results shows close approximation with the theoretical results and the switch is efficiently used for 5G millimeter wave applications.
Maiti, Nilkamal,Im, Sang Hyuk,Lee, Yong Hui,Seok, Sang Il American Chemical Society 2012 ACS APPLIED MATERIALS & INTERFACES Vol.4 No.9
<P>Urchinlike nanostructure of well-defined Sb<SUB>2</SUB>S<SUB>3</SUB> crystals of 3–4 μm in length and 30–150 nm in diameter oriented along [001] direction have been produced at a mild reaction temperature of 90 °C from SbCl<SUB>3</SUB> and S-methyl 3-phenyldithiocarbazate [C<SUB>6</SUB>H<SUB>5</SUB>NHNHC(S)SMe] in ethylene glycol medium. During the reaction, the amorphous Sb<SUB>2</SUB>S<SUB>3</SUB> spheres of 1.4 μm in diameter were formed at early reaction stage and then crystalline nanorods were continuously grown at the surface of Sb<SUB>2</SUB>S<SUB>3</SUB> spheres while transforming their morphology into urchinlike structure. The urchinlike Sb<SUB>2</SUB>S<SUB>3</SUB> was composed of single-crystalline Sb<SUB>2</SUB>S<SUB>3</SUB> nanorods, belong to the orthorhombic phase with cell parameters <I>a</I> = 11.307 Å, <I>b</I> = 11.278 Å, <I>c</I> = 3.847 Å and absorbed the light up to 750 nm-wavelength region. The urchinlike Sb<SUB>2</SUB>S<SUB>3</SUB> architecture was applied to the photoelectrochemical cell.</P><P><B>Graphic Abstract</B> <IMG SRC='http://pubs.acs.org/appl/literatum/publisher/achs/journals/content/aamick/2012/aamick.2012.4.issue-9/am301141q/production/images/medium/am-2012-01141q_0006.gif'></P><P><A href='http://pubs.acs.org/doi/suppl/10.1021/am301141q'>ACS Electronic Supporting Info</A></P>
Vibration control of mechanical systems using semi-active MR-damper
Maiti, Dipak K.,Shyju, P.P.,Vijayaraju, K. Techno-Press 2006 Smart Structures and Systems, An International Jou Vol.2 No.1
The concept of structural vibration control is to absorb vibration energy of the structure by introducing auxiliary devices. Various types of structural vibration control theories and devices have been recently developed and introduced into mechanical systems. One of such devices is damper employing controllable fluids such as ElectroRheological (ER) or MagnetoRheological (MR) fluids. MagnetoRheological (MR) materials are suspensions of fine magnetizable ferromagnetic particles in a non-magnetic medium exhibiting controllable rheological behaviour in the presence of an applied magnetic field. This paper presents the modelling of an MRfluid damper. The damper model is developed based on Newtonian shear flow and Bingham plastic shear flow models. The geometric parameters are varied to get the optimised damper characteristics. The numerical analysis is carried out to estimate the damping coefficient and damping force. The analytical results are compared with the experimental results. The results confirm that MR damper is one of the most promising new semi-active devices for structural vibration control.
Damage assessment of structures from changes in natural frequencies using genetic algorithm
Maity, Damodar,Tripathy, Rashmi Ranjan Techno-Press 2005 Structural Engineering and Mechanics, An Int'l Jou Vol.19 No.1
A method is presented to detect and assess the structural damage from changes in natural frequencies using Genetic Algorithm (GA). Using the natural frequencies of the structure, it is possible to formulate the inverse problem in optimization terms and then to utilize a solution procedure employing GA to assess the damages. The technique has been applied to a cantilever beam and a plane frame, each one with different damage scenario to study the efficiency of the developed algorithm. A laboratory tested data has been used to verify the proposed algorithm. The study indicates the potentiality of the developed code to solve a wide range of inverse identification problems in a systematic way. The outcomes show that this method can detect and estimate the amount of damages with satisfactory precision.