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A wire-form emitter metaleinsulatoresemiconductor tunnel junction
M.I. Vexler 한국물리학회 2014 Current Applied Physics Vol.14 No.3
Physical effects arising due to change of configuration of a MIS system from planar to cylindrical, are theoretically analyzed. Attention is paid to the voltage partitioning and all the components of tunneling current. A simple simulation model is developed enabling prediction of the band diagram details and calculation of the currents. The trends expected with decreasing system radius are elucidated. Cylindrical geometry can be faced with when quantum wire is used as an electron emitter. Similar form may also be roughly attributed to an edge region of conventional MIS capacitors.
TCAD simulation of tunneling leakage current in CaF2/Si(111) MIS structures
Yu.Yu. Illarionov,M.I. Vexler,M. Karner,S.E. Tyaginov,J. Cervenka,T. Grasser 한국물리학회 2015 Current Applied Physics Vol.15 No.2
We introduce a simulation technique suitable to model the tunneling leakage current in the metal(- polySi)/CaF2/Si(111) MIS structures using TCAD simulators Minimos-NT and ViennaSHE. The simulations are performed using the real physical parameters of the CaF2/Si tunnel barrier. The results obtained for the case of near-equilibrium carrier transport are in a good agreement with experimental data and also with the simulation results yielded by our reference physical model. The obtained non-equilibrium hotelectron tunnel leakages in the hypothetical transistors with CaF2 as a gate dielectric are comparable to those in the structures with silicon dioxide. Being an important step forward for the device application of calcium fluorite, this work opens the possibility of simulating the characteristics of different siliconbased systems with crystalline insulators.