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( Hui Li ),( Jun Huang ),( Xinping Liu ),( Rongqing Zhou ),( Xiaofei Ding ),( Qianyin Xiang ),( Liqiang Zhang ),( Chongde Wu ) 한국미생물 · 생명공학회 2017 Journal of microbiology and biotechnology Vol.27 No.1
It is vital to understand the changing characteristics of interphase microbial communities and interspecies synergism during the fermentation of Chinese liquors. In this study, microbial communities in the three indispensable phases (pit mud, zaopei, and huangshui) of Luzhou-flavored liquor manufacturing pits and their shifts during cellars use were first investigated by polyphasic culture-independent approaches. The archaeal and eubacterial communities in the three phases were quantitatively assessed by combined phospholipid ether lipids/ phospholipid fatty acid analysis and fluorescence in situ hybridization. In addition, qualitative information regarding the microbial community was analyzed by PCR-denaturing gradient gel electrophoresis. Results suggested that the interphase microbial community profiles were quite different, and the proportions of specific microbial groups evolved gradually. Anaerobic bacteria and gram-positive bacteria were dominant and their numbers were higher in pit mud (10<sup>9</sup> cells/g) than in huangshui (10<sup>7</sup> cells/ml) and zaopei (10<sup>7</sup>cells/g). Hydrogenotrophic methanogenic archaea were the dominant archaea, and their proportions were virtually unchanged in pit mud (around 65%), whereas they first increased and then decreased in zaopei (59%-82%-47%) and increased with pit age in huangshui (82%-92%). Interactions between microbial communities, especially between eubacteria and methanogens, played a key role in the formation of favorable niches for liquor fermentation. Furthermore, daqu (an essential saccharifying and fermentative agent) and metabolic regulation parameters greatly affected the microbial community.
SOI radiation‑hardened 300 V half‑bridge date driver IC design with high dv/dt noise immunity
Yuexin Gao,Xiaowu Cai,Zhengsheng Han,Yun Tang,Liqiang Ding,Ruirui Xia,Mali Gao,Fazhan Zhao 전력전자학회 2023 JOURNAL OF POWER ELECTRONICS Vol.23 No.5
Noise immunity is a critical index of high-voltage half-bridge gate driver integrated circuits (IC). Various noise cancelation technologies have been proposed to improve dv/dt noise immunity with sacrifices in terms of area and propagation delay time. Besides, when it is applied to an inductive load, the half-bridge driver is vulnerable to negative surges at the VS terminal, which is the offset ground of the high-side channel. A 300 V half-bridge gate driver IC with noise rejection module is designed in this paper. The noise immunity can be improved to 87.5 V/ns. The VS negative swing region can be extended to − 5.1 V. In addition, the proposed driver IC can work normally at a working frequency of 500 kHz and the delay matching time between the high-side and the low-side is less than 4 ns. The propagation delay time of the high-side channel is measured at 71.6 ns. Furthermore, gamma ray irradiation experimental results show that the proposed structure presents a good radiation tolerance of 100 krad (Si). The presented half-bridge gate driver IC is fabricated with the silicon-on-insulator (SOI) bipolar-CMOS-DMOS (BCD) process, which occupied an area of 1.86 mm2.