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Mala S.,Latha H. K. E.,Udayakumar A. 한국물리학회 2023 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.83 No.3
This paper presents an efect of annealing temperature on microstructure and electrical properties of TiW contact flms deposited on ITO thin flm at a room temperature using DC magnetron sputtering system. As-deposited TiW contact flms are annealed at 200, 400 and 600 °C under vacuum environment. The microstructural properties are investigated using XRD, SEM and AFM. The electrical characteristics are characterized by linear transmission line method (L-TLM). The SEM and XRD investigations show that the TiW contact flm is composed of circular grains, and the crystals within the flm are oriented in either the (110) or (200) direction. An increase in grain size is observed on annealed TiW contact flms compared to as-deposited flms as investigated from SEM and AFM analysis. Annealing TiW contact flms at 600 °C improves their ohmic properties, reducing surface roughness and resulting in a specifc contact resistance of 6.25× 10−2 Ω cm2 at room temperature. These contacts are suitable for high-temperature sensor applications.