http://chineseinput.net/에서 pinyin(병음)방식으로 중국어를 변환할 수 있습니다.
변환된 중국어를 복사하여 사용하시면 됩니다.
Molecular Beam Epitaxy of Phosphorus-Doped ZnS
Kunio Ichino,Hiroshi Yoshida,Takashi Kawai,Hiroyuki Matsumoto 한국물리학회 2008 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.53 No.5
We have grown phosphorus-acceptor-doped ZnS by molecular beam epitaxy. Two sources of phosphorus (P), i.e., GaP and Zn3P2, were used and compared. The ZnS:P epitaxial layers grown using GaP exhibited acceptor-related emission in the low-temperature photoluminescence spectra while the layers grown using Zn3P2 did not show distinct acceptor-related emission. Secondary ion mass spectroscopy revealed, however, that the phosphorus concentration was much higher in the ZnS:P layers grown using Zn3P2. These different behaviors between the two P sources seem to originate from the difference in the molecular species.