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Nanosilicon for single-electron devices
H. Mizuta,Y. Furuta,T. Kamiya,Y. T. Tan,Z.A.K. Durrani,S. Amakawa,K. Nakazato,H. Ahmed 한국물리학회 2004 Current Applied Physics Vol.4 No.2-4
This paper presents a brief overview of the physics of nanosilicon materials for single-electron device applications. We study howa nanosilicon grain and a discrete grain boundary work as a charging island and a tunnel barrier by using a point-contact transistor,which features an extremely short and narrow channel. Single-electron charging phenomena are investigated by comparing as-prepared devices and various oxidized devices. The optimization of grain and grain-boundary structural parameters is discussed forimproving the Coulomb blockade characteristics and realizing room temperature device operation.