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RISS 인기검색어
- 검색키워드
- 저자 : Junyeap Kim (검색결과 4 건)
- 무료
- 기관 내 무료
- 유료
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Kim, Jaewon,Lee, Heesung,Kim, Seong Kwang,Kim, Junyeap,Park, Jaewon,Choi, Sung-Jin,Kim, Dae Hwan,Kim, Dong Myong IEEE 2016 IEEE transactions on electron devices Vol.63 No.11
<P>Separate extraction of source (RS) from drain resistance (RD) is important in the systematic modeling of electrical characteristics and investigation of physical mechanism related to the performance and reliability in MOSFETs and their integrated circuits. We report a hybrid open drain method (ODM), as a fully current-based characterization technique, for a comprehensive separation of asymmetric source and drain resistance components in a single MOSFET. In the hybrid ODM, the ODM through the parasitic bipolar transistor is combined with the dualsweep combinational transconductance technique, the channel resistance method, and the parasitic junction current method. We fully considered the asymmetry in the source and the drain possibly caused by the layout, process, and degradation under bias. We successfully extracted the resistance components with R-Se = 6.66-7.35 Omega, R-De = 7.64-8.34 Omega, RSo = 0.78-8.07 Omega, R-Do = 1.11-10.08 Omega, and R-SUB = 6.29-9.17 Omega in the n-channel MOSFETs. R-Se (R-De) is the VGS-independent external source (drain) resistance. R-So (R-Do) is the VGS-independent external spreading source (drain) resistance and RSi (RDi) is the VGS-dependent intrinsic source (drain) resistance, respectively. RSUB is the substrate resistance. The hybrid ODM is expected to be useful in the characterization of parasitic resistances in each MOSFET with asymmetry caused by the layout, process, and degradation without using multiple devices with different channel length (L) and width (W) for measurement.</P>
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Kim, Junyeap,Yoo, Hanbin,Lee, Heesung,Kim, Seong Kwang,Choi, Sungju,Choi, Sung-Jin,Kim, Dae Hwan,Kim, Dong Myong Elsevier 2018 Microelectronics and reliability Vol.85 No.-
<P>Parasitic resistances cause degradation of transconductance (g(m)), cutoff frequency (f(T)), current driving capability, and long term reliability of MOSFETs. We report a comprehensive extraction of parasitic resistance components in MOSFETs for the contact, the spreading current path, and the lightly doped drain region caused by the process, structure, and degradation. We considered the gate bias (V-GS)-dependence and the asymmetric overlap length (L-ov,L-SD) in the source and drain. We report systematically integrated extraction technique combined with the channel resistance method, the transfer length method, the dual-sweep combinational transconductance technique, the open drain method, and the parasitic junction current method. V Gs -independent resistances were separated to be R-Se = 6.8-6.9 Omega, R-De = 7.4-7.5 Omega, R-SUB = 7.4-7.6 Omega, R-So = 1.8-2.1 Omega, and R-Do = 3.2-3.5 Omega for MOSFETs with and at W/L = 50 mu m/0.27 mu m. V-GS-dependent intrinsic resistances are obtained to be R-Si = 1.9-4.4 Omega, R-Di = 1.4-3.2 Omega for the same devices. The V-GS-dependent intrinsic channel resistance (R-CH) is extracted with different channel lengths for MOSFETs with L = 0.18 mu m/0.27 mu m/0.36 mu m.</P>
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Lee, Heesung,Kim, Jaewon,Choi, Sungju,Kim, Seong Kwang,Kim, Junyeap,Park, Jaewon,Choi, Sung-Jin,Kim, Dae Hwan,Kim, Dong Myong IEEE 2017 IEEE electron device letters Vol.38 No.2
<P>We report a model for the band-bending effect (BBE) for improved extraction of the subgap density-of-states (DOS) in amorphous semiconductor thinfilm transistors (TFTs). In previous works, the potential (Psi(x)) across the amorphous active layer was assumed to be the same as the surface potential (Psi S) over the active layer without the BBE. Due to the distributed DOS (g(E)) over the bandgap and the modulation of the quasiFermi level (E-F(x,V-GS)) by the gate bias, the non-uniform potential distribution should be considered in the characterization of DOS. We propose an empirical quadratic potential model (Psi(x,V-GS) =Psi S(V-GS)(1 - x/t(IGZO))(2)) for the BBE and extract a corrected distribution of DOS [ g(E)]. We applied the BBE model to the amorphous indiumgallium- zinc oxide TFTs through the differential ideality factor technique. We extracted a corrected DOS as a superposition of two exponential functions with tail and deep state densities (N-To = 8.8 x 10(17) eV(-1)cm(-3), and N-Do = 9x10(16) eV(-1)cm(-3)) at the tail and deep state characteristic energy (kT(T) = 18 meV and kT(D) = 280 meV), respectively. We confirmed the potentialmodel and extracted DOS parameters by the TCAD simulation.</P>
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Heesung Lee,Junyeap Kim,Jaewon Kim,Seong Kwang Kim,Yongwoo Lee,Jae-Young Kim,Jun Tae Jang,Jaewon Park,Sung-Jin Choi,Dae Hwan Kim,Dong Myong Kim IEEE 2017 IEEE electron device letters Vol.38 No.5
<P>Amorphous InGaZnO (a-IGZO) thin-film transistors (TFTs) are investigated for a possible application to infrared (IR) photodetector through subgap density-ofstates over the forbidden bandgap. The origin of the sub-bandgap(hν <;E<SUB>g</SUB>) photo-response in a-IGZO TFTs is due to optically pumped electrons from the photo-responsive subgap states (E<SUB>C</SUB>-E<SUB>ph</SUB><;E<SUB>t</SUB><;E<SUB>F</SUB>). Among the sub-bandgap lights, we investigate the reproducible IR photo-response in a-IGZO TFTs as a photodetector without the persistent photoconductivity(PPC) effect. In this letter, we characterize the IR photo-response mechanism through various optical and electrical measurements on the wavelength, optical power, bias-modulated quasi-Fermi level, and photoresponsive states. This result is expected to provide independent and/or integrated IR detector with transparent substrate combined with a-IGZO TFTs.</P>
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