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Sohn, Jung Inn,Hong, Woong-Ki,Lee, Mi Jung,Lee, Takhee,Sirringhaus, Henning,Kang, Dae Joon,Welland, Mark E IOP Pub 2009 Nanotechnology Vol.20 No.50
<P>We demonstrate the effect of surface chemical dynamics on carrier transport and recombination processes of electron–hole pairs in ZnO nanowire field effect transistors. We have found that the electrical conductance decreases and the threshold voltages shift in a positive gate voltage direction, as electrical characteristics are measured repeatedly. We associate this with the enhancement of oxygen adsorption by capturing electrons from the induced current during the probing. This results in an overall depletion of electrons and thus causes the positive shift in threshold voltages associated with the origin and width of characteristic hysteresis loops. In addition, the surface environment dependence of the photo-response related to a recombination process in ZnO nanowires is discussed in terms of the surface chemical reaction and band bending. </P>
Stress-induced domain dynamics and phase transitions in epitaxially grown VO<sub>2</sub> nanowires
Sohn, Jung Inn,Joo, Heung Jin,Kim, Keun Soo,Yang, Hyoung Woo,Jang, A-Rang,Ahn, Docheon,Lee, Hyun Hwi,Cha, SeungNam,Kang, Dae Joon,Kim, Jong Min,Welland, Mark E IOP Pub 2012 Nanotechnology Vol.23 No.20
<P>We demonstrate that surface stresses in epitaxially grown VO<SUB>2</SUB> nanowires (NWs) have a strong effect on the appearance and stability of intermediate insulating M<SUB>2</SUB> phases, as well as the spatial distribution of insulating and metallic domains during structural phase transitions. During the transition from an insulating M<SUB>1</SUB> phase to a metallic R phase, the coexistence of insulating M<SUB>1</SUB> and M<SUB>2</SUB> phases with the absence of a metallic R phase was observed at atmospheric pressure. In addition, we show that, for a VO<SUB>2</SUB> NW without the presence of an epitaxial interface, surface stresses dominantly lead to spatially inhomogeneous phase transitions between insulating and metallic phases. In contrast, for a VO<SUB>2</SUB> NW with the presence of an epitaxial interface, the strong epitaxial interface interaction leads to additional stresses resulting in uniformly alternating insulating and metallic domains along the NW length.</P>
Sohn, Jung Inn,Joo, Heung Jin,Ahn, Docheon,Lee, Hyun Hwi,Porter, Alexandra E,Kim, Kinam,Kang, Dae Joon,Welland, Mark E American Chemical Society 2009 NANO LETTERS Vol.9 No.10
<P>We demonstrate that the Mott metal-insulator transition (MIT) in single crystalline VO(2) nanowires is strongly mediated by surface stress as a consequence of the high surface area to volume ratio of individual nanowires. Further, we show that the stress-induced antiferromagnetic Mott insulating phase is critical in controlling the spatial extent and distribution of the insulating monoclinic and metallic rutile phases as well as the electrical characteristics of the Mott transition. This affords an understanding of the relationship between the structural phase transition and the Mott MIT.</P>
정지인(Ji Inn Jung),손석호(Suk Ho Sohn),조욱현(Wook Hyun Cho),정정희(Jung Hee Jung),김용림(Yong Lim Kim),이진관(Jin Kwan Lee) 대한내과학회 1993 대한내과학회지 Vol.45 No.3
N/A Background: The prevalence of antibody to hepatitis C virus (anti-HCV) in healthy subjects from Korean has been investigated in various studies. But most of these studies were estimated from data in blood donors who were mostly young adults. So these studies could not represent the prevalence of anti-HCU in all age groups and its age distribution. Method: The prevalence of anti-HCV among healthy subjects in Ulsan area was evaluated using commercially available enzyme immunoassay. We studied a correlation between anti-HCV and alanine aminotransferase (ALT) level, and between anti-HCV and HBs Ag. Effects of increasing age and blood transfusion were also evaluated. Results: 1) The overall prevalence of anti-HCV was 1.079 among 3,000 healty subjects. 2) Male to female ratio was 2.5:1. The prevalence of anti-HCV among male subjects (1.21%) was higher than that among female subjects (0.7%). 3) Anti-HCV prevalence increased with increasing age through the fourth decade of life. 4) There was no significant difference both in the prevalence of anti-HCV in healthy subjects with or without HBs Ag and in the prevalence of anti-HCV in healthy subjects with or without the history of transfusion. 5) Anti-HCV prevalence increased linearly with the increase of alanine aminotransferase level. Conclusion: The prevalence of anti-HCV in healthy subjects in Ulsan area was 1.07%. There was a significant increase with increasing age above 30 years. There was a good correlation between the prevalence of anti- HCV and ALT level, but the prevalence of anti-HCV was not associated with blood transfusion.
Hou, Bo,Sohn, Myungbeom,Lee, Young-Woo,Zhang, Jingchao,Sohn, Jung Inn,Kim, Hansu,Cha, SeungNam,Kim, Jong Min unknown 2019 Nano energy Vol.62 No.-
<P><B>Abstract</B></P> <P>Artificially grown superstructures from small building blocks is an intriguing subject in ‘bottom-up’ molecular science and nanotechnology. Although discrete nanoparticles with different morphologies and physicochemical properties are readily produced, assembly them into higher-order structure amenable to practical applications is still a considerable challenge. This report introduces a stepwise heterogeneous approach for coupling colloidal quantum dots (QDs) synthesis with self-organization to directly generate quantum chains (QCs). By using vulcanized sulfur precursors, QDs are interdigitated into microscale chainlike supracrystals associated with oleylamine and oleic acid as structure directing agents. The cooperative nature of the QD growth and assembly have been extended to fabricate binary (PbS) and ternary metal chalcogenides (CuInS<SUB>2</SUB>) QC superstructures over a range of length scales. In addition, enhanced ion and charge transfer performance have been demonstrated which are determined to originate from the minimum interparticle distance and nearly bare nanocrystal surface. The process reported here is general and can be readily extended to the production of many other metal chalcogenide QD superstructures for energy storage applications.</P> <P><B>Highlights</B></P> <P> <UL> <LI> A new methodology for chemical synthesis self-organized quantum chain supracrystals. </LI> <LI> Binary and ternary metal chalcogenides quantum chain superstructures have been demonstrated over a range of length scales. </LI> <LI> Enhanced electrochemical capacity and durability via preserved nanograin boundaries and long-range ordered configuration. </LI> <LI> Demonstrate exceptional charge and ion transport properties in DFT simulations and lithium-ion batteries. </LI> </UL> </P> <P><B>Graphical abstract</B></P> <P>[DISPLAY OMISSION]</P>
Association Between Serum Triglycerides and Cerebral Amyloidosis in Cognitively Normal Elderly
Choi, Hyo Jung,Byun, Min Soo,Yi, Dahyun,Choe, Young Min,Sohn, Bo Kyung,Baek, Hye Won,Lee, Jun Ho,Kim, Hyun Jung,Han, Ji Young,Yoon, Eun Jin,Kim, Yu Kyeong,Woo, Jong Inn,Lee, Dong Young Elsevier 2016 The American journal of geriatric psychiatry Vol.24 No.8
Density control of ZnO nanowires grown using Au-PMMA nanoparticles and their growth behavior
Shin, Hyeon Suk,Sohn, Jung Inn,Kim, Dong Chung,Huck, Wilhelm T S,Welland, Mark E,Choi, Hee Cheul,Kang, Dae Joon IOP Pub 2009 Nanotechnology Vol.20 No.8
<P>Au nanoparticles stabilized by poly(methyl methacrylate) (PMMA) were used as a catalyst to grow vertically aligned ZnO nanowires (NWs). The density of ZnO NWs with very uniform diameter was controlled by changing the concentration of Au-PMMA nanoparticles (NPs). The density was in direct proportion to the concentration of Au-PMMA NPs. Furthermore, the growth process of ZnO NWs using Au-PMMA NPs was systematically investigated through comparison with that using Au thin film as a catalyst. Au-PMMA NPs induced polyhedral-shaped bases of ZnO NWs separated from each other, while Au thin film formed a continuous network of bases of ZnO NWs. This approach provides a facile and cost-effective catalyst density control method, allowing us to grow high-quality vertically aligned ZnO NWs suitable for many viable applications. </P>
Controlled Assembly for Well-Defined 3D Bioarchitecture Using Two Active Enzymes
Kim, Dong Chung,Sohn, Jung Inn,Zhou, Dejian,Duke, Thomas A. J.,Kang, Dae Joon American Chemical Society 2010 ACS NANO Vol.4 No.3
<P>This paper reports that a bioarchitecture with two different active enzymes can be fabricated conveniently on a prepatterned surface by highly selective surface-templated layer-by-layer (LBL) assembly by coupling a bilayer of avidin/biotin-lactate oxidase (biotin-LOD) with a bilayer of avidin/biotin-horseradish peroxidase (biotin-HRP). The two different active enzymes can be utilized as excellent building blocks for the fabrication of well-defined 3D nanostructures with precise control of the position and height on the surface. In addition, the LBL assembled bienzyme structures are highly functional, and bioarchitectures based on LOD and HRP-mediated coupling reaction can be employed in a number of viable biosensing applications.</P><P><B>Graphic Abstract</B> <IMG SRC='http://pubs.acs.org/appl/literatum/publisher/achs/journals/content/ancac3/2010/ancac3.2010.4.issue-3/nn900610u/production/images/medium/nn-2009-00610u_0002.gif'></P>
Yang, Hyoung Woo,Sohn, Jung Inn,Yang, Jae Hoon,Jang, Jae Eun,Cha, Seung Nam,Kim, Jongmin,Kang, Dae Joon Editions de Physique 2015 Europhysics letters Vol.109 No.2
<P>We report on the epitaxial growth of vanadium dioxide (VO2) thin films on (0001) GaN substrates using a radio frequency magnetron sputtering method and discuss their unusual M-2-mediated metal-insulator transition (MIT) properties. We found that large lattice misfits between the VO2 film and the GaN substrate could favor the stabilization of the intermediate insulating M-2 phase, which is known to be observed only in either doped or uniaxially strained samples. We demonstrated that the MIT in VO2 films on GaN substrates could be mediated via a monoclinic M-2 phase during the transition from a monoclinic M-1 to a rutile R phase. This was confirmed by temperature-dependent Raman studies that exhibited both an evident upshift of a high-frequency phonon mode (omega(V-O)) from 618 cm(-1) (M-1) to 645 cm(-1) (M-2) and a distinct peak splitting of a low-frequency phonon mode (omega(V-V)) at 221cm(-1) (M-2) for increasing temperatures. Moreover, a resistance change of four orders of magnitude was observed for VO2 thin films on GaN substrates, being indicative of the high quality of VO2 thin films. This study may offer great opportunities not only to improve the understanding of M-2-mediated MIT behavior in VO2 thin films, but also to realize novel electronic and optoelectronic devices. Copyright (C) EPLA, 2015</P>