http://chineseinput.net/에서 pinyin(병음)방식으로 중국어를 변환할 수 있습니다.
변환된 중국어를 복사하여 사용하시면 됩니다.
Control of nucleation characteristics of GaN nanograins grown by hydride vapor phase epitaxy
Chinkyo Kim,Boa Shin,Hyeokmin Choe,Jaiwon Jeon,이상화,Taegeon Oh,Yuri Sohn 한국물리학회 2007 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.51 No.III
GaN nanograins were grown by hydride vapor phase epitaxy and the nucleation characteristics of the nanograins were investigated by using secondary electron images. It was found that the density and the diameter of the grains could be {\it independently} controlled by changing the substrate temperature and the flow rate of N$_2$ over a Ga boat. In addition to the independent controllability of the diameter and density, the formation of nanofacets on the individual nanograins was observed to become prominent with increased growth temperature. These nanofacets were inferred to act as quasi-substrates for subsequently adsorbing atoms. In fact, randomly oriented nanorods in consistent with the nanofaceted grains were observed to form with similar growth conditions.