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Soogil Lee,Jaimin Kang,Jeong-Mok Kim,Taek-Hyeon Lee,Sungjun Lee,Donghyeon Han,Sanghwa Lee,Kab-Jin Kim,Byong-Guk Park 한국자기학회 2021 한국자기학회 학술연구발표회 논문개요집 Vol.31 No.1
Entering the era of Inter of Things (IOT), diverse smart devices generate and transfer enormous digital information. In this IOT environment, information security is becoming a critical issue because conventional software-based security technology is vulnerable to adversarial machine learning attacks. Thus, hardware-based security technology has been proposed to overcome this vulnerability, receiving much attention as an alternative. Especially, randomness of nature serves as an essential ingredient for the hardware-based security technology. For example, manufacturing processes of complementary-metal-oxide-semiconductor (CMOS) involves inevitable tolerances. Therefore, every electronic device is physically not identical despite the identical manufacturing processes. Those distinguishable device characteristics under the identical manufacturing process, so called “physical unclonable function (PUF)”, can potentially create non-identical output (response) under the identical input (challenge) generating unique identification of each electronic devices [1]. In this presentation, we demonstrate the spintronic PUF utilizing bottom-ferromagnet (FM)/nonmagnet/top-FM trilayer structures. Here, bottom and top FMs exhibit in-plane and perpendicular magnetic anisotropy, respectively. In these trilayer structures, field-free magnetization switching of top-FM is achieved by out-of-plane polarized spin current injection due to the interfacial spin precession mechanism, and the switching polarity is controlled by the in-plane magnetization direction of bottom-FM [2]. Under the identical demagnetization process of the bottom-FM, distinct magnetic domain distributions are formed on each identical wafer, consisting of a number of Hall-bar devices with random magnetization direction of bottom-FM along the demagnetization axis. These randomly distributed domains of bottom-FM on each wafer are electrically detected through the current-induced field-free spin-orbit torque switching polarity relies on the direction of bottom-FM. Therefore, these spintronic PUF wafers with unique pattern of domain distributions manifests itself as the unique electrical identification which can also be integrated into magnetic random access memory. Furthermore, we also discuss the reconfigurability and reliability of this spintronic PUF, providing great potential to hardware-based security applications because it is compatible with current CMOS technology.