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- 저자 : Jae-HyeongLee (검색결과 1 건)
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Structural and Electrical Properties of a Y2O3 Bu er Layer by the Two Step Process
Dong-GunLim,Jae-HyeongLee,JunsinYi 한국물리학회 2002 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.40 No.1
We investigated the structural and the electrical properties of yttrium oxide (Y$_2$O$_3$) as a buffer layer for a single transistor ferroelectric random access memory (FRAM). The Y$_2$O$_3$ films were prepared by using the rf reactive magnetron sputtering method in the presence of oxygen (O$_2$) gas. The Y$_2$O$_3$ buffer layers were deposited at a low substrate temperature below 400 $^\circ$C and were treated by rapid thermal annealing (RTA). Investigated parameters were the substrate temperature, the O$_2$ partial pressure, the post-annealing temperature, and the suppression of the interfacial SiO$_2$ layer generation. The microstructure of the Y$_2$O$_3$ films was found to depend highly on the annealing temperature and on the amount of O$_2$ gas used during the deposition process. X-ray diffraction (XRD) analysis showed the Y$_2$O$_3$ films transformed from an amorphous to a polycrystalline form when the annealing temperature was increased to 800 $^\circ$C. Also, O$_2$ partial pressures of less than 10 \% were present for the peak of monoclinic yttrium oxide. For a well-fabricated sample, we achieved a leakage current density ($J_{leak}$) on the order of 10$^{-7}$ A/cm$^2$ and a breakdown electric field ($E_{br}$) of about 2 MV/cm for the Y$_2$O$_3$ film. A capacitance versus voltage analysis yielded a dielectric constant of 8.1. We successfully achieved an interface state density of Y$_2$O$_3$/Si as low as 8.72$\times$10$^{10}$ cm$^{-2}$ eV$^{-1}$. Low interface states were obtained from the very low lattice mismatch of less than 1.75 \%.
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