http://chineseinput.net/에서 pinyin(병음)방식으로 중국어를 변환할 수 있습니다.
변환된 중국어를 복사하여 사용하시면 됩니다.
Growth of Cubic GaN on a Nitrided AlGaAs (001) Substrate by Using Hydried Vapor Phase Epitaxy
LEE HOJUN,YANG MIN,AHN HYUNGSOO,CHANG JIHO,조채용,JANG KEUNSUK,KIM HONGSEUNG,김석환,KIM KYOUNGHWA,YI JEONGYOON 한국물리학회 2006 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.48 No.II
GaN layers were grown on AlGaAs (001) substrates by using hydride vapor phase epitaxy (HVPE). Growth parameters such as the nitridation temperature of the AlGaAs substrate and the growth rate of the GaN layer were found to be critical determinants for the growth of cubic GaN layer. Nitridation of the AlGaAs surface was performed in a NH3 atmosphere at a temperature range of 550 . 700 C. GaN layers were grown at different growth rates on the nitrided AlGaAs substrates. The surface morphologies and the chemical constituents of the nitrided AlGaAs layers were characterized with scanning electron microscopy (SEM) and X-ray photoelectron spectroscopy (XPS). For the optical and the crystalline characterization of the GaN films, cathodoluminescence (CL) and X-ray diffraction (XRD) were carried out.