http://chineseinput.net/에서 pinyin(병음)방식으로 중국어를 변환할 수 있습니다.
변환된 중국어를 복사하여 사용하시면 됩니다.
Investigation of Photoelectrochemical Water Splitting for Mn-Doped In2O3 Film
Xianke Sun,Xinhe Fu,Tingting You,Qiannan Zhang,Liuyang Xu,Xiaodong Zhou,Honglei Yuan,Kuili Liu 대한금속·재료학회 2018 ELECTRONIC MATERIALS LETTERS Vol.14 No.6
Undoped and Mn-doped In 2 O 3 fi lms were prepared by radiofrequency magnetron sputtering technique. The eff ects of Mn dopingon the structural and optical properties of as-prepared fi lms were investigated using X-ray diff raction, X-ray photoelectronspectroscopy and ultraviolet–visible spectroscopy. Mn doping can enhance the intensity of (222) peak in Mn-doped In 2 O 3thin fi lm, indicating Mn dopant promotes preferred orientation of crystal growth along (222) plane. XPS analyses revealedthat the doped Mn ions exist at + 2 oxidation states, substituting for the In 3+ sites in the In 2 O 3 lattice. UV–Vis measurementsshow that the optical band gap E g decreases from 3.33 to 2.87 eV with Mn doping in In 2 O 3 , implying an increasing sp–dexchange interaction in the fi lm. Our work demonstrates a practical means to manipulate the band gap energy of In 2 O 3 thinfi lm via Mn impurity doping, and signifi cantly improves the photoelectrochemical activity.