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T. Abe,N. Yamane,T. Nishiguchi,H. Kozeni,T. Yoshida,M. Adachi,H. Kasada,K. Ando 한국물리학회 2008 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.53 No.1
A practical blue waveguide Stark-eect optical modulator using ZnSe/ZnMgSSe asymmetric cou- pled quantum wells (ACQWs) has been demonstrated. The device structure is a p-i-n diode with a 50 periods ZnSe(6 ML)/ZnMgSSe(2 ML)/ZnSe(12 ML) ACQW active region grown on an n-GaAs substrate by using molecular beam epitaxy (MBE). The ridge-shape devices are fabricated by wet- etching with a fairly-short eective modulation waveguide length of 13 m and are located under a top stripe-electrode. The waveguide modulator exhibits a high modulation depth of 95 % (contrast ratio: 13 dB) under reverse bias condition of 68 V at room temperature at an operating wavelength of 458 nm. A practical blue waveguide Stark-eect optical modulator using ZnSe/ZnMgSSe asymmetric cou- pled quantum wells (ACQWs) has been demonstrated. The device structure is a p-i-n diode with a 50 periods ZnSe(6 ML)/ZnMgSSe(2 ML)/ZnSe(12 ML) ACQW active region grown on an n-GaAs substrate by using molecular beam epitaxy (MBE). The ridge-shape devices are fabricated by wet- etching with a fairly-short eective modulation waveguide length of 13 m and are located under a top stripe-electrode. The waveguide modulator exhibits a high modulation depth of 95 % (contrast ratio: 13 dB) under reverse bias condition of 68 V at room temperature at an operating wavelength of 458 nm.
K. Miki,Y. Oshita,D. Katada,K. Nobe,M. Nomura,T. Abe,H. Kasada,K. Ando,M. Adachi 한국물리학회 2008 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.53 No.5
High sensitivity, stable ultraviolet photodiodes of a ZnSSe PIN junction structure on p+-GaAs substrates were developed by using molecular beam epitaxy (MBE). These short-wavelength photodiodes are fabricated on p-type (100) GaAs by utilizing an optimized \hetero-interface super-lattice (SL) buer" consisting of ZnTe-ZnSe multiple quantum well (MQW), overcoming a large energy barrier (>1 eV) for hole conduction in the GaAs-ZnSe hetero-interface. Another new important improved technique is to form an extremely thin, high-donor doping n+-window layer of 150 Å for incident ultraviolet light, by which we have established a high sensitivity of 0.11 A/W (ηex = 45 %: wavelength = 300 nm) with very low dark leakage currents (sub pA/mm2 at 20 V) at 300 K.
New Defect Control for Extremely Long-Lived Widegap-White Light Emitting Diodes
K. Ando,Y. Hashimoto,K. Kanzaki,S. Ohashi,Y. Morita,T. Abe,H. Kasada,M. Adachi 한국물리학회 2008 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.53 No.5
A new current pulse-width control for long-lived ZnSe-white LEDs is presented. Using the defect controlling technique together with high quality ZnSe white LED, it is proved that bright ZnSe white LEDs have exhibited long device life-time exceeding 20000 hrs for its in practical use. It is also evidenced that the present current pulse-width control is not limited in the ZnSe system, but very effective for other widegap semiconductor bright and long-live light emitting devices of GaN and ZnO.