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( Ellen Gutkin ),( Syed A. Hussain ),( Sang H. Kim ) The Editorial Office of Gut and Liver 2012 Gut and Liver Vol.6 No.1
A 34-year-old female with a history of advanced pulmonary sarcoidosis and right-sided heart failure presented with chronic, postprandial right upper quadrant pain, and weight loss. Endoscopic biliary drainage was deemed to be the most appropriate therapeutic option for her chronic cholecystitis. Endoscopic retrograde cholangiopancreatography utilizing the SpyGlass cholangioscopy system allowed us to access the cystic duct through which the gallbladder was ultimately decompressed, via biliary stent placement and gallstone irrigation. This is the fi rst report of SpyScope assisted placement of fully covered self-expandable metal biliary stents into the cystic duct enabling defi nitive treatment of symptomatic chronic cholecystitis and cholelithiasis without cholecystectomy. (Gut Liver 2012;6:136-138)
Microstructure and strength of AlN–SiC interface studied by synchrotron X-rays
Argunova, T. S.,Gutkin, M. Y.,Shcherbachev, K. D.,Je, J. H.,Lim, J. H.,Kazarova, O. P.,Mokhov, E. N. Springer Science + Business Media 2017 JOURNAL OF MATERIALS SCIENCE - Vol.52 No.8
<P>Bulk AlN crystals grown by sublimation on SiC substrates exhibit relatively high dislocation densities. The kind of defect formation at early growth stages influences the structural quality of the grown crystals. In this work, the dislocation distribution near to the interface is understood through investigation of thin (<= 1.5 mm) continuous (non-cracked) freestanding crystals obtained in one process with the evaporation of the substrates. TheAlN specimens were characterized using synchrotron radiation imaging techniques. We revealed by triple-axis X-ray diffraction study that, near to the former interface, randomly distributed dislocations configured to form boundaries between similar to 0.02 degrees misoriented sub-grains (from [0001] direction). Threading dislocation structure similar to that in epitaxial GaN films was not detected. To explain these observations, a theoretical model of misfit stress relaxation near the interface is suggested.</P>
Argunova, Tatiana S.,Gutkin, Mikhail Yu.,Kazarova, O.P.,Mokhov, E.N.,Nagalyuk, Sergey S.,Je, Jung H. Trans Tech Publications, Ltd. 2015 Materials science forum Vol.821 No.-
<P>We report on the growth method and the structural characterization of freestanding AlN crystals. An AlN layer is grown on a gradually decomposing SiC substrate yielding a freestanding crack free 2H single crystal with dislocation density 5×10<SUP>4</SUP>cm<SUP>-2</SUP>and without grain boundaries as confirmed by synchrotron radiation phase contrast imaging and topography data. Wafers of 600-1000 μm thick and up to 15 mm in diameter are obtained. The thermal stress distribution in a conventional AlN/SiC structure is discussed. Theoretical estimates show that cracking of AlN layers is a natural result of their growth on undecomposed SiC substrates.</P>
Argunova, T. S.,Yi, J. M.,Jung, J. W.,Je, J. H.,Sorokin, L. M.,Gutkin, M. Yu.,Belyakova, E. I.,Kostina, L. S.,Zabrodskii, A. G.,Abrosimov, N. V. WILEY-VCH Verlag 2007 Physica status solidi. PSS. A, Applications and ma Vol.204 No.8
<P>The defect structure of Si<SUB>1–x </SUB>Ge<SUB>x </SUB> wafers with 4% of germanium and their interfaces with Si wafers were studied using white radiation topography and phase-sensitive radiography. The heterostructures were manufactured by direct bonding of Si<SUB>1–x </SUB>Ge<SUB>x </SUB> and Si crystalline wafers made of bulk crystals that were grown by the Czochralski technique. In Si<SUB>1–x </SUB>Ge<SUB>x </SUB> crystals, the segregations of Ge act as dislocation nucleation sites. In Si<SUB>1–x </SUB>Ge<SUB>x </SUB>/Si bonded structures, the segregation of Ge as well as the accumulation of dislocations induce elastic strain and plastic deformation during high-temperature bonding annealing. With the topography–radiography combination, we are able not only to detect microcracks, indicating nonbonded areas, by radiography, but also to reveal dislocations and long-range strain fields by topography at the same time. (© 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)</P>