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- 저자 : Gamyoung Lee (검색결과 3 건)
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Local Field Switching 방식의 MRAM 설계
이감영(Gamyoung Lee),이승연(Seungyeon Lee),이현주(Hyunjoo Lee),이승준(Seungjun Lee),신형순(Hyungsoon Shin) 대한전자공학회 2008 電子工學會論文誌-SD (Semiconductor and devices) Vol.45 No.8
본 논문에서는 새로운 스위칭 방식인 LFS (Local Field Switching)을 이용하여 설계한 128비트 MRAM (Magnetoresistive Random Access Memory)에 대해 기술하였다. LFS 방식은 MTJ (Magnetic Tunnel Junction)를 직접 통과해 흐르는 전류에 의해 형성되는 국소 자기장을 이용하여 MTJ의 극성을 변환시킨다. 이 방식은 MTJ와 전류의 거리가 가깝기 때문에 작은 전류로도 충분히 큰 자기장을 형성하므로 writing current가 적어도 된다. 또한 Digit Line이 없어도 되므로 half select disturbance가 발생하지 않아 기존 MTJ를 이용한 방식에 비해 셀 선택도가 우수하다. 설계한 MRAM은 1T(트랜지스터)-1MTJ의 메모리 셀 구조를 가지며 양방향 write driver와 mid-point reference cell block, current mode sense amplifier를 사용한다. 그리고 MTJ 공정 없이 회로 동작을 확인하기 위해 LFS-MTJ cell을 CMOS emulation cell로 대체하였다. 설계한 회로를 6 metal을 사용하는 0.18㎛ CMOS 공정으로 구현하였고 제작된 chip을 custom board 상에서 테스트하여 동작을 확인하였다. In this paper, we describe a design of a 128bit MRAM based on a new switching architecture which is Local Field Switching(LFS). LFS uses a local magnetic field generated by the current flowing through an MTJ. This mode reduces the writing current since small current can induce large magnetic field because of close distance between MTJ and the current. It also improves the cell selectivity over using conventional MTJ architecture because it doesn't need a digit line for writing. The MRAM has 1-Transistor 1-Magnetic Tunnel Junction (1T-1MTJ) memory cell structure and uses a bidirectional write driver, a mid-point reference cell block and a current mode sense amplifier. CMOS emulation cell is adopted as an LFS-MTJ cell to verify the operation of the circuit without the MTJ process. The memory circuit is fabricated using a 0.18 ㎛ CMOS technology with six layers of metal and tested on custom board.
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The 3-Bit Gray Counter Based on Magnetic-Tunnel-Junction Elements
Seungyeon Lee,Nakmyeong Kim,Heejung Yang,Gamyoung Lee,Seungjun Lee,Hyungsoon Shin IEEE 2007 IEEE transactions on magnetics Vol.43 No.6
<P>A magnetic-tunnel-junction (MTJ) element has been widely studied for data storage applications. An MTJ element can also be used to compute Boolean functions and store the output result. A magnetologic device based on this MTJ element can constitute sequential logic functions as well as combinational logic. Counter is one of the most frequently used sequential logic blocks in digital logic systems. In this paper, a novel architecture of a 3-bit gray counter based on magnetologic elements is presented. It is shown that ten MTJ elements with complementary metal-oxide-semiconductor (CMOS) circuits for sense amplifier and writing-current driver can make a 3-bit gray counter. HSPICE simulation results are presented to verify the functionality of the proposed circuits</P>
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InGaAs quantum dot molecules during selective etching using an In droplet mask
Lee, Jihoon,Wang, Zhiming,Hirono, Yusuke,Kim, Eun-Soo,Koo, Sang-Mo,Dorogan, Vitaliy G,Mazur, Yuriy I,Song, Sangmin,Park, Gamyoung,Salamo, Gregory J Institute of Physics [etc.] 2011 Journal of Physics. D, Applied Physics Vol.44 No.2
<P>We investigated the optical transition of InGaAs quantum dot molecules (QDMs) during selective etching of GaAs using In droplets to demonstrate low-density QDMs. During the selective etching, In droplets act as nanoscale masks and only QDMs underneath the droplets survive, by which process low-density QDMs are fabricated. The thickness of selective GaAs etching is systematically varied and a gradual red-shift is observed with the increased etching thickness. The continuing red-shift can be explained by the strain relaxation due to GaAs etching. This technique to achieve low-density QDMs by selective etching using droplets as nanoscale mask is a simple and flexible approach. This study can find applications in single QDM spectroscopy and other spectroscopic techniques.</P>
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