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K-city 자율주행 경진대회 참가를 위한 자율주행 플랫폼 개발
김태호(Teaho Kim),김동진(Dongjin Kim),민동규(Dongkyu Min),서현지(Hyeonji Seo),윤호진(Hojin yun),정은빈(Eunbin Jung),이진강(Jingang Lee),권혁재(Hyeokjae Kwon),김진석(Jinseok Kim),김대국(Daekuk Kim),문일주(Iljoo Moon),유정흠(Jeongheum You 대한기계학회 2021 대한기계학회 춘추학술대회 Vol.2021 No.11
In this paper, a ROS-based autonomous driving framework designed by team ACCA from the School of Mechanical Engineering, Soongsil University, for the 2021 international college student creative car challenge held in K-city. The autonomous vehicle’s chassis used in this challenge is equipped with Velodyne 3D lidar, a Sick down-looking 2D lidar, Xsens MTi-30 AHRS, CCD camera, webcam, and PC-based controller. First, before the challenge in K-city, we evaluated the ROS-package-based SLAM such as LIO-SAM in a ring-shaped road environment on the campus of Soongsil University. After the successful SLAN and mapping process, the hdl_localization, which is a 3D lidar-based real-time 3D localization package, is used to estimate the global pose with respect to the global frame using NDT scan matching. For lane detection, traffic sign, and traffic signal recognition, the two well-known DNN models are utilized. Based on experimental results from both simulation and an actual autonomous vehicle platform, the Point Instance Network (PINet) for lane detection shows 88% of test accuracy, and the YOLO V4 for the traffic light and sign recognition offers 95% test accuracy.
조동규,우상현,Jungil Yang,Dong-HeeLee,임유성,Daekuk Kim,Sungmin Park,이문석 대한금속·재료학회 2013 ELECTRONIC MATERIALS LETTERS Vol.9 No.4
In this work, we investigated the enhanced performance of IZO-based TFTs with HfSiOx gate insulators. Four types of HfSiOx gate insulators with different deposition powers were deposited by co-sputtering HfO2and Si. To simplify the processing sequences, all of the layers of the TFTs were deposited by an RF-magnetron sputtering method using patterned shadow-masks without any intentional heating of the substrate or subsequent thermal annealing. The four different HfSiOx structural properties were investigated by x-ray Diffraction (XRD),Atomic Force Microscopy (AFM), and the electrical characteristics were also analyzed. There were some noticeable differences depending on the composition of the HfO2 and Si combination. The TFT based on the HfSiOx gate insulator comprised of HfO2 (100 W)-Si (100 W) showed the best results with a field effect mobility of 2.0 cm2/V·s, a threshold voltage of 0.6 V, an Ion/off ratio of 3.18 × 105, and an insulator surface roughness of 0.16 nm RMS. This confirms that the composition of the HfO2 and Si is an important factor in an HfSiOx insulator. In addition, the effective bonding of the HfO2 and Si reduced the defects in the insulator bulk and also improved the interface quality between the channel and the gate insulator