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Reduction of Reverse Short-Channel E ect in High-Energy Implanted Retrograde Well
HyeokjaeLee,YoungJunePark,HongShickMin,HyungsoonShin,Dae-GwanKang 한국물리학회 2002 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.40 No.4
In this research, the reverse short channel eect (RSCE) is signicantly dierent in electrical behavior for diffused well and high-energy (>150 keV - boron) implanted retrograde well (HRW) due to dopant diffusion kinetics. The magnitude of the VTH is signicantly smaller in the HRW than in diused well. We investigate the in uence of various implantation energies and doses on the RSCE, and we use process and device simulation to analyze the RSCE.
Effects of Shallow Trench Isolation on Silicon-on-Insulator Devices for Mixed Signal Processing
HyeokjaeLee,YoungJunePark,HongShickMin,이종호,HyungsoonShin,WookyungSun,Dae-GwanKang 한국물리학회 2002 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.40 No.4
The transconductance and the low-frequency noise of SOI MOSFETs with shallow trench isolation (STI) structures are investigated qualitatively for various device sizes and three dierent gate shapes. Devices with the channel region butted to the STI region show a reduction in the mobility and the increase in the low-frequency noise as the channel width is reduced. In comparison, the devices without STI butted channel region show a much lower reduction in the mobility and increase in the noise characteristics with the channel width. From the charge pumping and noise measurement results, the interface-state generated by the STI process is identied for the first time, as the cause of these anomalous phenomena.