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Current Dispersion E ects of Planar-Type AlGaN/GaN HFET's Grown by MOCVD
Chang-SeokKim,Jin-SikYun,Byung-KwonChoi,Jae-EungOh,Sung-BumBae,Jung-HeeLee,Jong-WookKim,Jae-SeungLee,Jin-HoShin 한국물리학회 2002 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.40 No.2
Low frequency-transconductance dispersion and pulsed I-V measurements have been taken on a planar-type an AlGaN/GaN heterostructure field-effect transistor (HFET) to study the effect of trap states on its current-voltage (I-V) characteristics. The transconductance as a function of frequency ranging from 1 Hz to 100 kHz was measured at various temperatures and bias conditions. We have observed the existence of electron traps associated with the surface states or bulk traps. These electron traps are responsible for the decrease of the transconductance and the drain current collapse. From the Arrhenius plot, a relatively slow state with an activation energy of 47.2 meV has been identified. To expect microwave power performance of the device, the pulsed I-V characteristic was measured in dierent class operations. A model to explain the observed current collapse has been suggested.