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RISS 인기검색어
- 검색키워드
- 저자 : Bosze, W. (검색결과 4 건)
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Ico, G.,Showalter, A.,Bosze, W.,Gott, S.,Kim, B.,Rao, M.,Myung, N.,Nam, J. Royal Society of Chemistry 2016 Journal of Materials Chemistry A Vol.4 No.6
<P>Piezoelectricity-based energy harvesting from wasted mechanical energies has garnered an increasing attention as a clean energy source. Especially, flexible organic piezoelectric materials provide an opportunity to exploit their uses in mechanically challenging areas where brittle inorganic counterparts have mechanical limitations. In this regard, electrospinning has shown its advantages of producing poly(vinylidene fluoride) (PVDF)-based nanofibrous structures without the necessity of a secondary processing to induce/increase piezoelectric properties. However, the effects of electrospun fiber dimension, one of the main morphological parameters in electrospun fibers, on piezoelectricity have not been fully understood. In this study, two dependent design of experiments (DOEs) were utilized to systematically control the dimensions of electrospun poly(vinylidene fluoride-trifluoroethylene) (P(VDF-TrFE)) to produce nanofibers having their diameter ranging from 1000 to sub-100 nm. Such a dimensional reduction resulted in the increase of piezoelectric responsible electroactive phase content and the degree of crystallinity. These changes in crystal structure led to approximately 2-fold increase in piezoelectric constant as compared to typical P(VDF-TrFE) thin films. More substantially, the dimensional reduction also increased the Young's modulus of the nanofibers up to approximately 80-fold. The increases in piezoelectric constant and Young's modulus collectively enhanced piezoelectric performance, resulting in the exponential increase in electric output of nanofiber mats when the fiber diameters were reduced from 860 nm down to 90 nm. Taken together, the results suggest a new strategy to improve the piezoelectric performance of electrospun P(VDF-TrFE) via optimization of their electromechanical and mechanical properties.</P>
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One-dimensional nanostructures based bio-detection
Chartuprayoon, Nicha,Zhang, Miluo,Bosze, Wayne,Choa, Yong-Ho,Myung, Nosang V. Elsevier 2015 Biosensors & bioelectronics Vol.63 No.-
<P><B>Abstract</B></P> <P>This paper presents a review on recent developments of one-dimensional (1-D) nanostructures based label-free chemiresistive/chemFET biosensors and the various sensing mechanisms used for biomolecular detection. The sensor performance including sensitivity, selectivity, and reliability is compared in terms of material synthesis of the sensor's element, relating surface functionalization schemes to their properties with respect to selected bioreceptors, its method of fabrication, and its intended operation. As a final point, we outline the prospects of chemiresistive/chemFET biosensors and recommend specific advancements in this field.</P> <P><B>Highlights</B></P> <P> <UL> <LI> One-dimensional label-free chemiresistive/chemFET biosensors are reviewed. </LI> <LI> Various sensing configuration and mechanisms are studied. </LI> <LI> Factors impacting the sensing performance are summarized. </LI> <LI> The prospects of chemiresistive/chemFET biosensors are outlined. </LI> </UL> </P>
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Kim, Jiwon,Zhang, Miluo,Bosze, Wayne,Park, Su-Dong,Lim, Jae-Hong,Myung, Nosang V. Elsevier 2015 Nano energy Vol.13 No.-
<P><B>Abstract</B></P> <P>In this work, we demonstrate an enhancement of thermoelectric properties by creating γ-SbTe/Sb<SUB>2</SUB>Te<SUB>3</SUB> nanocomposite film, where γ-SbTe nanoinclusions are embedded in a nanocrystalline Sb<SUB>2</SUB>Te<SUB>3</SUB> matrix. The two-phase nanocomposite was formed via solid-state phase transition using an amorphous Sb<SUB>2</SUB>Te<SUB>3</SUB> electrodeposits as the starting materials. The crystallinity and crystal structure of intermediate states during the amorphous-crystalline solid-state transformation were characterized by sequentially annealing the sample. The formation of the γ-SbTe is attributed to the different enthalpy of mixing for the bonding structures available in the Sb–Te system. Room temperature measurement of electrical and thermoelectrical properties as a function of annealing temperature revealed that the two-phase system provided the carrier energy filtering effect at the interfaces between two phases, leading to enhanced Seebeck coefficient without affecting its electrical transport properties. The band bending at the two-phase interfaces was indirectly manifested by measuring their difference in the valence band, advocating the possibility of a strong energy-dependent charge scattering to the enhanced Seebeck coefficient.</P> <P><B>Highlights</B></P> <P> <UL> <LI> We demonstrate an enhancement of thermoelectric properties by creating γ-SbTe/Sb<SUB>2</SUB>Te<SUB>3</SUB> nanocomposite film, where γ-SbTe nanoinclusions are embedded in a nanocrystalline Sb<SUB>2</SUB>Te<SUB>3</SUB> matrix. </LI> <LI> The formation of the γ-SbTe is attributed to the different enthalpies of mixing for the bonding structures available in the Sb–Te system. </LI> <LI> The two-phase system provided the carrier energy filtering effect at the interfaces between two phases, leading to enhanced Seebeck coefficient without affecting its electrical transport properties. </LI> <LI> The band bending at the two-phase interfaces was indirectly manifested by measuring the difference in the valence band (90meV), advocating the possibility of a strong energy-dependent charge scattering. </LI> </UL> </P> <P><B>Graphical abstract</B></P> <P>[DISPLAY OMISSION]</P>
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Zhang, Miluo,Brooks, Lauren L.,Chartuprayoon, Nicha,Bosze, Wayne,Choa, Yong-ho,Myung, Nosang V. American Chemical Society 2014 ACS APPLIED MATERIALS & INTERFACES Vol.6 No.1
<P>A Schottky contact-based hydrogen (H<SUB>2</SUB>) gas sensor operable at room temperature was constructed by assembling single-walled carbon nanotubes (SWNTs) on a Si/SiO<SUB>2</SUB> substrate bridged by Pd microelectrodes in a chemiresistive/chemical field effect transistor (chemFET) configuration. The Schottky barrier (SB) is formed by exposing the Pd–SWNT interfacial contacts to H<SUB>2</SUB> gas, the analyte it was designed to detect. Because a Schottky barrier height (SBH) acts as an exponential bottleneck to current flow, the electrical response of the sensor can be particularly sensitive to small changes in SBH, yielding an enhanced response to H<SUB>2</SUB> gas. The sensing mechanism was analyzed by <I>I–V</I> and FET properties before and during H<SUB>2</SUB> exposure. <I>I–V</I><SUB><I>sd</I></SUB> characteristics clearly displayed an equivalent back-to-back Schottky diode configuration and demonstrated the formation of a SB during H<SUB>2</SUB> exposure. The <I>I–V</I><SUB><I>g</I></SUB> characteristics revealed a decrease in the carrier mobility without a change in carrier concentration; thus, it corroborates that modulation of a SB via H<SUB>2</SUB> adsorption at the Pd–SWNT interface is the main sensing mechanism.</P><P><B>Graphic Abstract</B> <IMG SRC='http://pubs.acs.org/appl/literatum/publisher/achs/journals/content/aamick/2014/aamick.2014.6.issue-1/am404328g/production/images/medium/am-2013-04328g_0008.gif'></P>
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