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Akihiro Tamura,Masafumi Kobune,Kazuki Imagawa,Hisashi Oshima,Yusuke Daiko,Atsushi Mineshige,Tetsuo Yazawa,Hiroshi Nishioka,Hironori Fujisawa,Masaru Shimizu,Hideshi Yamaguchi,Koichiro Honda 한국물리학회 2011 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.59 No.31
3.0-mm-thick a- and b-axis-oriented (Bi_(3.25)Nd_(0.75))Ti_3O_(12) (BNT-0.75) films were fabricated on conductive Nb:TiO_2(101) (Nb = 0, 0.048, 0.46, 0.79 mass%) single crystal substrates by high-temperature sputtering. A BNT films grown on undoped TiO_2 substrates have no orientation, whereas BNT films deposited on Nb:TiO_2 substrates with 0.46-0.79 mass% Nb show strong (h00/0k0) diffractions and grow with a heteroepitaxial relationship to the underlying Nb:TiO_2 substrates. The BNT-0.75 film deposited on Nb:TiO_2(101) substrate with 0.79 mass% Nb was indicated the peculiar shape of approximately 100-150-nm-thick nanoplates. We speculate that the driving force for producing a plate-like structure for BNT films is attributed to the large anisotropy of linear expansion coefficients for Bi_4Ti_3O12, and the comparatively small lattice matching between Nb:TiO_2 substrate and BNT film.
Masafumi Kobune,Hisashi Oshima,Akihiro Tamura,Kazuki Imagawa,Yusuke Daiko,Atsushi Mineshige,Tetsuo Yazawa,Hitoshi Morioka,Keisuke Saito,Hideshi Yamaguchi,Koichiro Honda 한국물리학회 2011 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.59 No.31
a- and b-axis-oriented (Bi_(3.25)Nd_(0.75))Ti_3O_(12) films, 3.0 mm thick, were fabricated on conductive IrO_2(101)/Al_2O_3(012) and Nb:TiO_2(101) [Nb = 0, 0.05 and 0.79 mass%] substrates by high-temperature sputtering. A BNT film grown on an IrO_2(101)/Al_2O_3(012) substrate had a low crystallinity (2.83˚), a low degree of a- and b-axis orientations [a_((h00/0k0)) = 49.2%] and a dense microstructure that a- and b-axis-oriented crystals existed locally in the film, while a BNT film grown on Nb:TiO_2(101) substrate with 0.79 mass% Nb showed a high crystallinity (0.57˚), a high a_((h00/0k0)) (99.9%) and a porous microstructure that was comprised of many nanoplate-like crystals. It is shown that the BNT film grew with a heteroepitaxial relationship to the underlying Nb:TiO_2 substrate has a symmetric loop shape, with a remanent polarization (2P_r) of 29 mC/cm^2 and a coercive field (2E_c) of 297 kV/cm.
Hideto Tada,Masafumi Kobune,Koji Fukushima,Hisashi Oshima,Daisuke Horit,Akihiro Tamura,Yusuke Daiko,Atsushi Mineshige,Tetsuo Yazawa,Hironori Fujisawa,Masaru Shimizu,Hideshi Yamaguchi,Koichiro Honda 한국물리학회 2009 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.55 No.2
The structural characteristics, the mechanism of crystal growth, and the ferroelectric properties of partially Sm-substituted perovskite bismuth-samarium-nickel-titanate [(Bi1−xSmx)(Ni0.5Ti0.5)- O3; BSNT, x = 0− 0.9] thin films deposited on Pt(100)/MgO(100) substrates by rf sputtering have been investigated using X-ray diffraction, transmission electron microscope, and polarization - electric field hysteresis loop measurements. The fabricated BSNT samples with x≥0.6 were confirmed to have a single-phase perovskite structure. Of the four samples (x = 0.6 0.7, 0.8, and 0.9) with a single-phase perovskite structure, the c-axis-oriented epitaxial BSNT film with x = 0.9 exhibited the best hysteresis loop, with a remanent polarization of 2 μC/cm2 and a coercive field of 100 kV/cm. The structural characteristics, the mechanism of crystal growth, and the ferroelectric properties of partially Sm-substituted perovskite bismuth-samarium-nickel-titanate [(Bi1−xSmx)(Ni0.5Ti0.5)- O3; BSNT, x = 0− 0.9] thin films deposited on Pt(100)/MgO(100) substrates by rf sputtering have been investigated using X-ray diffraction, transmission electron microscope, and polarization - electric field hysteresis loop measurements. The fabricated BSNT samples with x≥0.6 were confirmed to have a single-phase perovskite structure. Of the four samples (x = 0.6 0.7, 0.8, and 0.9) with a single-phase perovskite structure, the c-axis-oriented epitaxial BSNT film with x = 0.9 exhibited the best hysteresis loop, with a remanent polarization of 2 μC/cm2 and a coercive field of 100 kV/cm.