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Efficiency ehancement of W-CDMA base-station envelope tracking power amplifiers via load modulation
Jeong, Jinho,Asbeck, Peter Wiley Subscription Services, Inc., A Wiley Company 2007 MICROWAVE AND OPTICAL TECHNOLOGY LETTERS Vol.49 No.8
<P>Load impedance modulation and gate bias control were investigated to improve the performance of W-CDMA base-station envelope tracking amplifiers by means of simulations based on the measured data of a 10-W GaAs FET power amplifier. It is shown that adapting the load impedance along with the drain bias voltage can effectively improve the average efficiency of envelope tracking amplifier. The improvement becomes more apparent in the operating regime of power back-off. © 2007 Wiley Periodicals, Inc. Microwave Opt Technol Lett 49: 1954–1957, 2007; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.22566</P>
Chen, Han-Ping,Yuan, Yu,Yu, Bo,Ahn, Jaesoo,McIntyre, Paul C.,Asbeck, Peter M.,Rodwell, Mark J. W.,Taur, Yuan IEEE 2012 IEEE transactions on electron devices Vol.59 No.9
<P>This paper presents a detailed analysis of the multifrequency capacitance–voltage and conductance–voltage data of <TEX>$\hbox{Al}_{2}\hbox{O}_{3}/\hbox{n-InGaAs}$ </TEX> MOS capacitors. It is shown that the widely varied frequency dependence of the data from depletion to inversion can be fitted to various regional equivalent circuits derived from the full interface-state model. In certain regions, incorporating bulk-oxide traps in the interface-state model enables better fitting of data. By calibrating the model with experimental data, the interface-state density and the trap time constants are extracted as functions of energy in the bandgap, from which the stretch-out of gate voltage is determined. It is concluded that the commonly observed decrease of the 1-kHz capacitance toward stronger inversion is due to the increasing time constant for traps to capture majority carriers at the inverted surface.</P>
High Power Digitally-Controlled SOI CMOS Attenuator With Wide Attenuation Range
Jinho Jeong,Pornpromlikit, Sataporn,Scuderi, Antonino,Presti, Calogero,Asbeck, Peter IEEE 2011 IEEE microwave and wireless components letters Vol.21 No.8
<P>An attenuator is presented in a 0.13 μm silicon-on-insulator (SOI) CMOS technology, to be used for power control of RF wireless transmitters. The design is based on a T-network consisting of two series switches and 63 shunt switches. A gate switching technique is utilized in the series switches for high power handling and high isolation. Measurements at 1.88 GHz show that the minimum insertion loss is as low as 0.6 dB and maximum attenuation is 55.3 dB with worst input return loss of 8.1 dB. The attenuation can be digitally controlled in steps of around 1 dB. The 1 dB gain compression point is as high as 21.0 dBm in the through mode.</P>