http://chineseinput.net/에서 pinyin(병음)방식으로 중국어를 변환할 수 있습니다.
변환된 중국어를 복사하여 사용하시면 됩니다.
Ambuj Mishra,K. A. Athmaselvi 한국식품과학회 2016 Food Science and Biotechnology Vol.25 No.1
Encapsulation of Lactobacillus rhamnosus was performed using spray and freeze-drying. Maltodextrin and gum arabic were used in different combinations for spray-drying. Values of 50% maltodextrin and 40% gum arabic gave best results. Spray-drying was done at temperatures ranging from 110 to 150oC. Survivability, acid tolerance, antibiotic sensitivity testing, and total anthocyanin content and physical properties of moisture content, water activity, color analysis, bulk density, and tap density were analyzed. The moisture content of encapsulated powders ranged from 6.51 to 7.72% (wet basis) and bulk density and tap density values ranged from 0.334 to 0.308 g/cm3 and 0.350 to 0.330 g/ cm3, respectively. Total anthocyanin contents were 19.28 and 7.264 mg/100 mL, respectively, for freeze and spray-dried powders. Freeze-dried probiotic pomegranate juice powder yielded best results with high survivability of Lactobacillus rhamnosus, a high total anthocyanin content, and other properties.
Prajapat, Jugal Kishore,Mishra, Ambuj Kumar Department of Mathematics 2017 Kyungpook mathematical journal Vol.57 No.2
Differential subordination and superordination results associated with a generalized Hurwitz-Lerch Zeta function in the open unit disk are obtained by investigating appropriate classes of admissible functions. In particular some inequalities for generalized Hurwitz-Lerch Zeta function are obtained.
Rohit Sharma,Ashish Kumar,Anit Dawar,Sunil Ojha,Ambuj Mishra,Anshu Goyal,Radhapiyari Laishram,V. G. Sathe,RITU SRIVASTAVA,Om Prakash Sinha 한국전기전자재료학회 2023 Transactions on Electrical and Electronic Material Vol.24 No.2
Field effect transistors (FETs) are considered as the backbone of electronic industry. In this study, we adopted a simple drop cast method for the fabrication of MoS2 and WS2 channel based FET on commercially available pre-patterned OFET devices. The synthesis of few-layers thick MoS2 and WS2 nanosheets (NSs) has been done by solvent-assisted exfoliation method. FESEM and TEM study reveals that NSs have lateral dimensions in micron and have polycrystalline nature. From XPS, it is observed that MoS2 NSs has 2H phase whereas WS2 have hybrid 1T and 2H phase. The frequency difference in Raman vibrational mode for MoS2 and WS2 NSs is 24.08 cm-1 and 63.84 cm-1 respectively, confirms that number of layers is reduced after sonication. UV-visible spectroscopy reveals that the bandgap is 1.7 eV and 1.8 eV for MoS2 and WS2 NSs respectively. Later, these nanosheets have been drop-casted as the channel material on pre-patterned FETs devices and their output and transfer characteristics have been studied. It found that the current On/Off ratio is 10 4 and 10 3 for MoS 2 and WS2-FET device respectively. This facile fabrication of FET devices may provide a new stage for researchers who do not have access of lithography facilities for FET fabrication.