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RISS 인기검색어
- 검색키워드
- 저자 : Ali A. Orouji (검색결과 5 건)
- 무료
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Zeinab Ramezani,Ali A. Orouji 한국물리학회 2017 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.71 No.4
This paper suggests and investigates a double-gate (DG) MOSFET, which emulates tunnel field effect transistors (M-TFET). We have combined this novel concept into a double-gate MOSFET, which behaves as a tunneling field effect transistor by work function engineering. In the proposed structure, in addition to the main gate, we utilize another gate over the source region with zero applied voltage and a proper work function to convert the source region from N+ to P+. We check the impact obtained by varying the source gate work function and source doping on the device parameters. The simulation results of the M-TFET indicate that it is a suitable case for a switching performance. Also, we present a two-dimensional analytic potential model of the proposed structure by solving the Poisson’s equation in x and y directions and by derivatives from the potential profile; thus, the electric field is achieved. To validate our present model, we use the SILVACO ATLAS device simulator. The analytical results have been compared with it.
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Morteza Rahimian,Ali A. Orouji,Amirhossein Aminbeidokhti 한국물리학회 2013 Current Applied Physics Vol.13 No.4
In this paper, we present the unique features exhibited by a novel nanoscale SiGe-on-insulator metaloxide-semiconductor field-effect transistor (MOSFET) with modified channel band energy. The key idea in this work is to modify the band energy in the channel for improving electrical performances. Graded Ge composition profile is employed in the channel that leads to call the proposed structure as GC-SGOI structure. Using two-dimensional two-carrier simulation we demonstrate that the GC-SGOI structure has higher saturation velocity in comparison with stepped (SC-SGOI) and uniform (UC-SGOI) germanium composition due to the high conduction and valence bands slopes by using graded Ge composition profile. Also, our results show that the GC-SGOI exhibit excellent properties not only higher mobility,drain current and saturation velocity but also hot electron degradation improvement and better reliability. Therefore, refer to the results, the GC-SGOI structure has superior performances in comparison with the SC- and UC-SGOI structures which leads to be a good candidate for VLSI circuits.
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Leakage current reduction in nanoscale fully-depleted SOI MOSFETs with modified current mechanism
Ali A. Orouji,Morteza Rahimian 한국물리학회 2012 Current Applied Physics Vol.12 No.5
For the first time, we have presented a novel nanoscale fully depleted silicon-on-insulator metal-oxidesemiconductor field-effect transistor (SOI-MOSFET) with modified current mechanism for leakage current reduction. The key idea in this work is to suppress the leakage current by injected carriers decrement into the channel from the source in weak inversion regime while we have created a built-in electric field in the channel for improving the on current of device. Therefore, we have introduced a trapezoidal doping that distributed vertically in the channel and called the proposed structure as vertical trapezoid doping fully depleted silicon-on-insulator MOSFET (VTD-SOI). Using two-dimensional two-carrier simulation we demonstrate that the VTD-SOI decreases the leakage current in comparison with conventional uniform doping fully depleted silicon-on-insulator MOSFET (C-SOI). Also, our results show short channel effects (SCEs) such as drain induced barrier lowering (DIBL) and threshold voltage roll-off improvement in the proposed structure. Therefore, the VTD-SOI structure shows excellent performance for scaled transistors in comparison with the C-SOI and can be a good candidate for CMOS low power circuits.
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Triple Tooth AlGaN/GaN HEMT on SiC Substrate: A Novel Structure for High-Power Applications
Majid Ghaffari,Ali A. Orouji,Mojtaba Valinataj 한국물리학회 2017 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.71 No.12
In this paper, a AlGaN/AlN/GaN/SiC High Electron Mobility Transistor (HEMT) to reduce the electric field is suggested. The main idea of this work is to improve the Direct Current (DC) and Radio Frequency (RF) properties of device by modifying the depletion region in the channel. The proposed structure consists of a floating metal like a comb with triple tooth which is located in the space between the gate and drain and inside the buffer layer. We called the proposed structure as triple tooth HEMT (TT-HEMT). The RF and DC characteristics of the proposed structure are studied using numerical simulations. The breakdown voltage (VBR) increases to 169.5 V for the proposed structure in comparison with 103 V for the conventional HEMT (C-HEMT) due to the modified electric field distribution in the channel of the TT-HEMT structure. The maximum output power density (Pmax) of the TT-HEMT structure is 60.4% greater than that of the C-HEMT. The optimized results show that the maximum oscillation frequency (fmax) and cut-off frequency (fT ) of the proposed structure improve 111% and 26.5%, respectively compared to the C-HEMT structure. In addition, the maximum available gain (MAG) of the TT-HEMT structure is obtained 8.5 dB higher than that of the C-HEMT structure at the frequency of 40 GHz. The optimal results show that whatever the number of teeth on metal increases, the depletion region in the channel is modified more and the breakdown voltage increases, as well. Besides, the output power density (Pmax) is improved with the increasing number of teeth on metal (N). This characteristic is also true, for the cut-off frequency (fT ), the maximum oscillation frequency (fmax) and the maximum available gain (MAG) of the proposed structure. However, the drain current (ID) of the proposed structure is reduced.
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Mahsa Mehrad,Ali A. Orouji 한국물리학회 2012 Current Applied Physics Vol.12 No.5
High breakdown voltage and reduced on-resistance are desired characteristics in power MOSFETs. In order to obtain an excellent performance of Trench Gate Power MOSFET, we have proposed a new structure in which a SiGe zone is incorporated in the drift region to reduce on-resistance. Also, the buried oxide is considered in the drift region that surrounds the SiGe zone to increase breakdown voltage. The proposed structure is called a SiGe Zone Trench Gate MOSFET (SZ-TG). Our simulation with two dimensional simulator shows that by reducing an electric field and controlling the effects of parasitic BJT transistor in the SZ-TG structure, we can expand power applications of trench gate power structures.
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