http://chineseinput.net/에서 pinyin(병음)방식으로 중국어를 변환할 수 있습니다.
변환된 중국어를 복사하여 사용하시면 됩니다.
- 中文 을 입력하시려면 zhongwen을 입력하시고 space를누르시면됩니다.
- 北京 을 입력하시려면 beijing을 입력하시고 space를 누르시면 됩니다.
RISS 인기검색어
- 검색키워드
- 저자 : Agarwal Vipul (검색결과 2 건)
- 무료
- 기관 내 무료
- 유료
-
Exploring the Potential of Natural Products as FoxO1 Inhibitors: an In Silico Approach
Gupta Anugya,Haldhar Rajesh,Agarwal Vipul,Rajput Dharmendra Singh,Chun Kyung-Soo,Han Sang Beom,Raj Vinit,Lee Sangkil 한국응용약물학회 2024 Biomolecules & Therapeutics(구 응용약물학회지) Vol.32 No.3
FoxO1, a member of the Forkhead transcription factor family subgroup O (FoxO), is expressed in a range of cell types and is crucial for various pathophysiological processes, such as apoptosis and inflammation. While FoxO1’s roles in multiple diseases have been recognized, the target has remained largely unexplored due to the absence of cost-effective and efficient inhibitors. Therefore, there is a need for natural FoxO1 inhibitors with minimal adverse effects. In this study, docking, MMGBSA, and ADMET analyses were performed to identify natural compounds that exhibit strong binding affinity to FoxO1. The top candidates were then subjected to molecular dynamics (MD) simulations. A natural product library was screened for interaction with FoxO1 (PDB ID- 3CO6) using the Glide module of the Schrödinger suite. In silico ADMET profiling was conducted using SwissADME and pkCSM web servers. Binding free energies of the selected compounds were assessed with the Prime-MMGBSA module, while the dynamics of the top hits were analyzed using the Desmond module of the Schrödinger suite. Several natural products demonstrated high docking scores with FoxO1, indicating their potential as FoxO1 inhibitors. Specifically, the docking scores of neochlorogenic acid and fraxin were both below -6.0. These compounds also exhibit favorable drug-like properties, and a 25 ns MD study revealed a stable interaction between fraxin and FoxO1. Our findings highlight the potential of various natural products, particularly fraxin, as effective FoxO1 inhibitors with strong binding affinity, dynamic stability, and suitable ADMET profiles.
-
Pydimarri Padmaja,Radhamma Erigela,D. Venkatarami Reddy,SK Umar Faruq,A. Krishnamurthy,B. Balaji,M. Lakshmana Kumar,Sreevardhan Cheerla,Vipul Agarwal,Y. Gowthami 한국전기전자재료학회 2024 Transactions on Electrical and Electronic Material Vol.25 No.2
In this paper, we have investigated the impact of the un-doped and recessed gate structure on the performance of the 6 H-SiC Metal Semiconductor Field Effect Transistor. The performance of the 6 H-SiC MESFET analyzed using TCAD simulations. The proposed un-doped gate structure made of high-k dielectric materials and low-k dielectric materials being hafnium oxide (HfO2) and silicon dioxide (SiO2) and it has minimized ionized impurity scattering, leading to increased electron mobility and improved carrier concentration. One of substrate layer of this device grown on Silicon (Si) and β-gallium oxide (β-Ga2O3). Performance metrics such as drain current, transconductance, subthreshold slope, and cutoff frequency are evaluated and compared with conventional SiC MESFET structures. The proposed device exhibits superior current driving capabilities, enhanced transconductance, and reduced leakage currents, leading to improved power efficiency. Moreover, the recessed gate structure contributes to a significant reduction in short channel effects, making the device more suitable for low power applications. The simulation parameters are calculated and compared with conventional MESFET structure with the length of source and drain in submicron technology. Therefore the drain current of this proposed device is improved 68%.
연관 검색어 추천
이 검색어로 많이 본 자료
활용도 높은 자료
