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        Investigation of the doping and Stark effects on the band structure and optical absorption of 1.55 mm GaNAsBi/GaAs MQWs

        C. Bilel,M.M. Habchi,A. Ben Nasr,I. Guizani,A. Rebey,B. El Jani 한국물리학회 2016 Current Applied Physics Vol.16 No.3

        We present a self-consistent calculation combined with the 16-band anticrossing model in order to investigate the electronic and optical properties of n-doped GaNAsBi/GaAs multiple-QWs operating at 1.55 mm. Optoelectronic features of these quantum structures seem advantageous for the design of photodetector devices. We have found that doping induces a blue shift of the fundamental transition energy for the uncoupled double-QWs with the barrier width Lb ¼ 12 nm. This transition energy shows a red shift when the doped DQWs are coupled (Lb ¼ 2 nm). An applied electric field favors further this shift. The coupling and Stark effects on the spatial distribution of confined electrons density are discussed. The absorption coefficient for the coupled 4 nm GaN.04As.89Bi.07/GaAs DQWs is enhanced compared to the undoped or uncoupled DQWs. Finally, we have examined the dependence of the absorption magnitude on the doping density and electric field for different values of wells number.

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        Ab initio predictions of structure preferences and band gap character in ordered AlAs1xBix alloys

        R. Alaya,M. Mbarki,A. Rebey,A.V. Postnikov 한국물리학회 2016 Current Applied Physics Vol.16 No.3

        In this work, we have studied mixed IIIeV semiconductors of the Al(As,Bi) composition. We have examined a number of ordered structures of this composition in a series of first-principles calculations within the density functional theory, making use of full-potential linearized augmented plane-wave method, as implemented in the WIEN2k code. The calculations have been done for “minimal” supercells realizing the 1:3, 1:1, and 3:1 relations of As:Bi at the anion sublattice. Specifically, the CuAu and chalcopyrite structures were considered for the 1:1 relation; the famatinite and luzonite structures for the 1:3. In all cases, the full structure optimization has been performed with spineorbit interaction taken into account, and the band structure/band gap analysis done. As expected, an insertion of Bi into the AlAs enlarges, on the average, the cell volume and results in marked disparity of the bond lengths. The optical band gap decreases with Bi composition; the indirect to direct band gap crossover is interpolated to happen at nearly 16% of Bi. The spineorbit splitting increases with Bi compositions, and exceeds the band gap starting from Bi composition of about 50%. The study is concluded by a report on calculated optical properties, i.e., the dielectric function and refractive index, for different Bi compositions.

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