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- 저자 : A. Bittar (검색결과 1 건)
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Damage studies in dry etched textured silicon surfaces
M. M. Alkaisi,G. Kumaravelu,A. Bittar,D. Macdonald,J. Zhao 한국물리학회 2004 Current Applied Physics Vol.4 No.2-4
Surface texturing is a more permanent and eective solution to eliminate reections compared with antireection coatings inoptical devices. In this study texturing was performed using a reactive ion etching technique, reectance was measured and theresultant damage on the surfaces was monitored through the minority carrier lifetime measurements. High minority carrier lifetimeis an indication of low defect centres and is essential for maximum collection eciency. It is found that the reectance of the texturedcone structures is less than 0.4% at wavelengths from 500 to 1000 nm and shows a minimum of 0.29% at 1000 nm. while thereectivity from black silicon is around 1% and from hole structures is around 6.8% in the same wavelength range. The quasi-steady-state photo conductance technique was used to measure the eective carrier lifetimes of the textured samples, showing that chemicalwet etch damage removal is eective in improving the lifetime of the sample.
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