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MBE에 의한 다양자 우물제작 및 특성연구 (공명투과 다이오드의 제작과 전기적 특성)
김순구(Soon Koo Kim),강태원(Tae Won Kang),홍치유(Chi You Hong),정관수(Kwan Soo Chung),주영도(Young Do Joo) 한국진공학회(ASCT) 1992 Applied Science and Convergence Technology Vol.1 No.1
GaAs/AlAs 이중장벽 구조를 MBE(Molecular Beam Epitaxy)법으로 성장하여, mesa diode를 제작하고 전류전압 특성을 측정하였다. 계면은 평탄한 이중장벽 구조로 성장되었음이 확인되었으며, 실온에서 장벽의 두께가 변화함에 따라 PVCR(Peak to Valley Current Ratio)의 값은 크게 변하지 않았다. 이는 장벽의 두께가 증가함에 따라 nonresonant tunneling에 의한 valley current가 크게 증가함에 기인한다. The GaAs/AlAs double barrier structures was grown by MBE(Molecular Beam Epitaxy). Mesa diode was fabricated and I-V characteristics of the diode were measured by semiconductor parameter analyser at room temperature. TEM pictures show the double barrier structure with abrupt interface. PVCR(Peak to Valley Current Ratio) proves to be independent of barrier thickness. These results show that increase in barrier thickness leads to larger valley current by non-resonant tunneling.
洪致裕,姜泰遠 동국대학교 1983 論文集 Vol.22 No.-
We have investigated the role trap energy level, hole capture cross section and a defect model from thermally stimulated current (TSC) curves of p-type Si implated Li^+ ions. The TSC curve shows a peak at 121K and the value of δ/ω is 0.57, which means that the TSC is due to a 2nd kinetic order mechanism. The trap energy levels obtained from deexcitation method. The values of E_T and σ are 0.28eV and 8.3×10^-16㎠, respectively. This hole trap may be due to the (Li_I+O+V) defect.