패턴 다양화에 따른 대면적 롤금형의 보호코팅 기술 개발에 대한 연구

임수영(S. Y. Lim),강호철(H. C. Kang),조윤혜(Y. H. Cho) 한국정밀공학회 2012 한국정밀공학회 학술발표대회 논문집 Vol.2012 No.5월

CdS1-xSex 광도전 박막의 전기 - 광학적 특성연구

양동익,신영진,임수영,박성문,최용대 ( D . I . Yang,Y . J . Shin,S . Y . Lim,S . M . Park,Y . D . Choi ) 한국센서학회 1992 센서학회지 Vol.1 No.1

Ferroelectric Pb_(0.99)[(Zr_(0.6)Sn_90.4))_(1-x)T(i_x)]_(0.98)Nb_(0.02)O₃(PNZST) thin films were deposited by a RF magnetron sputtering on (La_(0.5)Sr_(0.5))CoO₃(LSCO)/Pt/Ti/SiOz/Si substrate using a PNZST target with excess PbO of 10 mole%. The crystallinity and electrical properties of the thin films with various composition ratio were investigated. The thin films deposited at the substrate temperature of 500℃ and the power of 80 W were crystallized to a perovskite phase after rapid thermal annealing(RTA) at 650 ℃ for 10 seconds in air. A PNZST thin films with Ti of 10 mole% showed the good crystallinity and ferroelectric properties. The remanent polarization and coercive field of the PNZST capacitor were about 20 μC/㎠ and 50 kV/cm, respectively. The reduction of the polarization after 2.2 X 10^9 switching cycles was less than 10 % .

$CdS_{1-x}Se_{x}$ 광도전 박막의 전기-광학적 특성연구

양동익,신영진,임수영,박성문,최용대,Yang, D.I.,Shin, Y.J.,Lim, S.Y.,Park, S.M.,Choi, Y.D. 한국센서학회 1992 센서학회지 Vol.29 No.3

본 연구는 $CdS_{1-x}Se_{x}$의 박막을 제작하고 그 전기-광학적인 특성을 조사한 것이다. 전자선 가열증착법을 이용하여 $CdS_{1-x}Se_{x}$을 알루미나 기판위에 $1.5{\times}10^{-7}$ torr의 압력, 4kV의 전압, 2.5 mA의 전류 그리고 기판온도를 $300^{\circ}C$로 유지하여 증착하였다. 증착된 $CdS_{1-x}Se_{x}$ 박막은 X-ray 회절 실험을 통하여 볼 때, 육방정계의 결정구조를 가지며 성장되었다. $CdS_{1-x}Se_{x}$ 도전막은 특정분위기에서 $550^{\circ}C$, 30분간 열처리함으로써 높은 광전도성을 나타내게 되었다. 또한 Hall 효과, 광전류 스펙트럼, 감도, 최대 허용 전력과 응답시간 등을 조사하였다. We report the crystal growth and the electro-optic characteristics of $CdS_{1-x}Se_{x}$ thin films. $CdS_{1-x}Se_{x}$ thin films wire deposited on the alumina plate by electron beam evaporation technique in pressure of $1.5{\times}10^{-7}$ torr, voltage of 4kV, current of 2.5mA and substrate temperature of $300^{\circ}C$. The deposited $CdS_{1-x}Se_{x}$ thin films were proved to be a polycrystal with hexagonal structure through X-ray diffraction patterns. $CdS_{1-x}Se_{x}$ photoconductive films showed high photoconductivity after annealing at $550^{\circ}C$ for 30 minutes. And the films have been investigated the Hall effect, photocurrent spectra, sensitivity, maximum allowable power dissipation and response time.

Crystal Growth and Sensor Development of Ⅱ - VI Compound Semiconductor : CdS

양동익(D.I. Yang),신영진(Y.J. Shin),임수영(S.Y. Lim),최용대(Y.D. Choi) 한국진공학회(ASCT) 1992 Applied Science and Convergence Technology Vol.1 No.1

E-Beam 기법을 이용하여 증착시킨 Ag doped CdS 박막은 육방정계이고 공기, Ar 분위기에서 550℃로 열처리한 결과 grain size가 1 ㎛ 정도로 성장되었고, Van Der Pauw 방법으로 구한 Hall data로부터 CdS crystal은 n형 반도체이고 상온에서의 carrier 농도는 2.7×10^(11)㎝-³이고 Hall mobility는 5.8×10² ㎠ V^(-1)sec^(-1) 정도임을 알 수 있었다.<br/> CdS : Ag 박막의 PL spectra는 Gaussian curve를 보여주었고, spectra peak는 파장이 520 ㎚ 근처에 위치하고 있으며, CdS : Ag 박막에서의 광전류(pc)와 암전류(dc)의 ratio(pc/dc)는 공기중에서 열처리한 시료의 값이 크다는 것을 알 수 있었다. This study deals with the crystal growth and the optical characteristics of CdS thin films activated by silver. CdS:Ag thin films were deposited by using an electron beam evaporation(EBE) technique in vacuum of 1.5×10^(-7)torr, voltage of 4 ㎸, current of 2.5 ㎃ and substrate temperature of 250℃. CdS:Ag photoconductive films prepared by EBE method show high photoconductivity after annealing at about 550℃ for 0.5 h in air and Ar gas.<br/> The grain size of CdS:Ag thin films annealed in Ar atmosphere (1 atm) was grown over 1 ㎛ and the thickness of the films is 4~5 ㎛. The analysis of X-ray diffraction patterns shows that the crystal structures are hexagonal. The diffraction line by (00.2) plane can only be observed, indicating that c-axis of hexagonal grows preferentially perpendicular to the substrate. The profiles of photoluminescence spectra of CdS:Ag films show Gaussian type curves at room temperature, the maximum peak spectral sensitivity of CdS:Ag is located at the wavelength of 520 ㎚.<br/> We annealed CdS:Ag thin films in air and Ar vapor in order to make the CdS photoconductors having the intensive photocurrent, the broad distribution of the photocurrent spectrum and the large value of the ratio of the photocurrent (pc) to the dark current(dc). We found that CdS:Ag thin films annealed in air atmosphere was the best one.

CdS_(1-x)Se_(x) 광전도 박막의 성장 및 광학적인 특성 연구

양동익,임수영,박성문,최용대 경북대학교 센서기술연구소 1992 센서技術學術大會論文集 Vol.3 No.1

CdS_(1-x)Se_x 광도전 박막의 전기-광학적 특성연구

양동익,신영진,임수영,박성문,최용대 全北大學校 基礎科學硏究所 1994 基礎科學 Vol.16 No.-

본 연구는 CdS_1-XSe_X의 박막을 제작하고 그 전기-광학적인 특성을 조사한 것이다. 전자선 가열증착법을 이용하여 CdS_1-XSe_X을 알루미나 기판위에 1.5× 10 exp (-7) torr의 압력, 4kV의 전압, 2.5mA의 전류 그리고 기판온도를 300℃로 유지하여 증착하였다. 증착된 CdS_1-XSe_X 박막은 X-ray 회절 실험을 통하여 볼 때, 육방정계의 결정구조를 가지며 성장되었다. CdS_1-XSe_X 도전막은 특정분위기에서 550℃, 30분간 열처리함으로써 높은 광전도성을 나타내게 되었다. 또한 Hall 효과, 광전류 스펙트럽, 감도, 최대 허용 전력와 응답시간 등을 조사하였다. We report the crystal growth and the electro-optic characteristics of CdS_1-XSe_X thin films. CdS_1-XSe_X thin films were deposited on the alumina plate by electron beam evaporation technique in pressure of 1.5× 10 exp (-7) torr, voltage of 4kV, current of 2.5 mA and substrate temperature of 300℃. The deposited CdS_1-XSe_X thin films were proved to be a polycrystal with hexagonal structure through X-ray diffraction patterns. CdS_1-XSe_X photoconductive films showed high photoconductivity after annealing at 550℃ for 30 minutes. And the films have been investigated the Hall effect, photocurrent spectra, sensitivity, maximum allwable power dissipation and response time.

광센서개발을 위한 CdSe:Ag 광도전 박막의 전기-광학적 성질

양동익,최용대,임수영,박성문 경북대학교 센서기술연구소 1991 센서技術學術大會論文集 Vol.2 No.1

전자빔 증착기술을 이용하여 CdSe:Ag 박막을 성장하고 그 전기적,광학적인 성질을 조사하였다. X-ray 회절무늬를 .통해서 결정구조는 육방정계이고 공기, Ar,Cd,Cu 분위기에서 550℃로 30분간 열처리한 결과 grain size가 1μm 정도로 성장되었다. Van der Pauw 방법으로 구한 Hall data로 부터 CdSe:Ag 박막은 n형 반도체이고상온에서의 carrier 농도가 7×10^(12) cm^(-3)이고 이동도는 1.6X10^(9)cm^(2)/V·sec 정도임을 알았다. CdSe:Ag 박막의 광발광과 광전류를 즉청하고. 광전류(Pc)와 암전류(dc)의 비(pc/dc)를 조사한 결과 Cd 분위기에서 열처리한 시료의 값이 크다는 것을 알았다. We report the crystal growth and the electro-optic characteristics of CdSe thin films activated by silver. CdSe:Ag thin films were deposited by using electron beam evaporation(EBE) technique in vacuum 1.5x10^(-7)torr, voltage of 4KV, current of 2.5mA and substrate temperature of 250℃. This CdSe:Ag thin films was proved to be a polycrystal with hexagonal structure through X-ray diffraction method. CdSe:Ag photoconductive films prepared by EBE method show high photoconductivity after annealing at 550℃ for 30 minutes in Cd vapor. And the splitting of valence band in photocurrent peak analyses due to crystal field effect. We measured the photocurrent spectra and photoluminescence spectra, and compared the photocurrent(pc) with dark current(dc), respectively, in order to obtain the high sensitive CdSe photoconductors.

A Study on CdSe photoconductive thin film for Photo sensor development

Yang, D.I.,Lim, S.Y.,Park, S.M.,Choi, Y.D. 경북대학교 센서기술연구소 1992 센서技術學術大會論文集 Vol.3 No.1

CdS:Ag Thin Films Prepared by Electron Beam Evaporation Technique

Yang, D.I.,Lim, S.Y.,Park, S.M.,Choi, Y.D. 경북대학교 센서기술연구소 1991 센서技術學術大會論文集 Vol.2 No.1

E-Beam 기법을 이용하여 증착시킨 Ag doped CdS 박막은 육방정계이고 공기, Ar 분위기에서 550℃로 열처리한 결과 grain size가 1μm 정도로 성장되었고, Van Der Pauw방법으로 구한 Hall data로부터 CdS crystal은 n형 반도체이고 상온에서의 carrier 농도는 2.7X10^(11)cm^(-3)이고 Hall mobility는 5.8X10^(2)cm^(2)V^(-1)sec^(-1)정도임을 알 수 있었다. CdS:Ag 박막의 PL spectra는 Gaussian curve를 보여주었고, spectra peak는 파장이 520nm 근처에 위치하고 있으며, CdS:Ag 박막에서의 광전류(pc)와 암전류(dc)의 ratio(pc/dc)는 공기중에서 열처리한 시료의 값이 크다는 것을 알 수 있었다. This study deals with the crystal growth and the optical characteristics of CdS thin films activated by silver. CdS:Ag thin films were deposited by using an electron beam evaporation(EBE) technique in vacuum of 1.5 x 10^(-7)torr, voltage of 4KV, current of 2.5mA and substrate temperature of 250℃. CdS:Ag photoconductive films prepared by EBE method show high photoconductivity after annealing at about 550℃ for 0.5h in air and Ar gas. The grain size of CdS:Ag thin films annealed in Ar atmosphere(1 atm) was grown over 1μm and the thickness of the films is 4~5 μm. The analyses of X-ray diffraction patterns show that the crystal structures are hexagonal. The diffraction line by (00·2) plane can only be observed, indicating that c-axis of hexagonal grows preferentially perpendicular to the substrate. The profiles of photoluminescence spectra of CdS:Ag films show Gaussian type curves of room temperature, the maximum peak spectral se□□tivity of CdS:Ag is located at the wavelength of 520nm. We annealed CdS:Ag thin films in air and Ar vapor in order to make the CdS photoconductors having the intensive photocurrent, the broad distribution of the photocurrent spectrum and the large value of the ratio of the photocurrent (pc) to the dark current(dc). We found that CdS:Ag thin films annealed in air atmosphere was the best one.