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비스무스 층구조형 페로브스카이트 SrBi<sub>2</sub>Nb<sub>2</sub>O<sub>9</sub> 강유전체의 이온 치환 효과
박성은,조정아,송태권,김명호,김상수,이호섭,Park, S.E.,Cho, J.A.,Song, T.K.,Kim, M.H.,Kim, S.S.,Lee, H.S. 한국재료학회 2003 한국재료학회지 Vol.13 No.12
Doping effect of various ions in Bi-layered ferroelectric $SrBi_2$$Nb_2$$O_{9}$ (SBN) ceramics was studied. Undoped SBN ceramic and SBN ceramics doped with $Ba^{2+}$, $Pb^{2+}$,$ Ca^{2+}$ , $Bi^{3+}$ , $La^{3+}$ , $Ti^{4+}$ , $Mo^{6+}$ , and $W^{6+}$ ions were made by a solid state reaction. Dielectric constants were measured with temperature. Ferroelectric transition temperature decreased with $Pb^{2+}$ , $Ba^{2+}$ , $La^{3+}$ doping, but the transition temperature increased with $Ca^{2+}$ , $Bi^{3+}$ , $Ti^{4+}$, $Mo^{6+}$ , or$ W^{6+}$ ionic doping. These results show that the ion size plays an important role in the ferroelectricity of SBN ceramic.
LCVD법을 이용한 박막성장장치의 제작 및 그 장치를 이용하여 제작한 Silicon Nitride 박막의 특성 연구
유동선(D. S. Yoo),김일곤(I. G. Kim),이호섭(H. S. Lee),정광호(K. H. Jeong) 한국진공학회(ASCT) 1993 Applied Science and Convergence Technology Vol.2 No.3
LCVD법에 의한 박막성장장치를 제작하였다. 제작한 CO₂ 레이저는 CO₂ : N₂ : He이 1:1:8로 혼합된 가스를 사용하였으며 최대 출력은 60W 였고 혼합가스의 유량이 20l/min, 방전전류 40mA일 때 50W의 비교적 안정된 출력을 얻을 수 있었다. 반응실의 기초 진공은 1×10^(-6)torr였으며 레이저를 기판에 수직 혹은 수평으로 조사할 수 있도록 설계하였다. 제작된 장치로 SiH₄ 및 NH₃를 재료로 하여 실리콘 및 quartz 기판위에 silicon nitride 박막을 증착하였다. 박막 생장시 가스를 흘리는 방식보다 가스를 채워놓고 하는 방식이 낮은 레이저 출력하에서 균일한 박막을 얻는데 효율적이라는 것을 발견하였다. 출력 55W의 레이저를 실리콘 기판에 5분간 조사하였을 때 최대 두께 1.5㎛의 박막을 얻었으며 quartz 기판위에는 출력 4W, 조사시간 6분에서 두께가 약 1㎛인 비교적 균질의 박막을 얻을 수 있었다. FT-IR 및 XPS 분석 결과 SiH₄와 NH₃의 혼합비가 1 : 12일 때 비교적 nitride화가 잘 된 박막이 얻어졌음을 알았다. The LCVD system was fabricated. We used the mixed gas for CO₂ laser with the mixing rate of CO₂ : N₂ : He=1 : 1 : 8, and abtained the maximum power of 60W. With gas flow of 20l/min and discharge current of 40 mA, the laser showed relatively stable power of 50W. The basic pressure of the chamber was 1×10^(-6)torr and the laser beam could be irradiated in normal or parellel direction at substrate. Silicon nitride thin film was deposited on silicon and quartz by use of SiH₄ and NH₃. It was found that the filled gas method was more effective than the flowing gas method for surface smoothness of the film. When 55W laser was irradiated for 5 minutes on silicon substrate we abtained the maximum thickness of 1.5 ㎛, and the thickness of 1.0 ㎛ was abtained on quartz with 4W power and 6 minutes irradiation. It was found by FT-IR and XPS that the well nitrided film could be abtained when the ratio of SiH₄ and NH₃ was 1 : 12.
조정아,박성은,송태권,김명호,이호섭,Cho, J.A.,Park, S.E.,Song, T.K.,Kim, M.H.,Lee, H.S. 한국재료학회 2003 한국재료학회지 Vol.13 No.6
$Sr_{l}$ $\pm$x/$Bi_{2}$ $\pm$y/$Ta_2$ $O_{9}$ and $Sr_{l}$ $\pm$$Bi_{x}$ $2\pm$y$Nb_2$$O_{9}$ ceramics were prepared by a solid state reaction method. X-ray diffraction analysis indicated that single-phase of Bi-layered perovskite was obtained. According to Sr/Bi content ratio, Curie temperature( $T_{c}$), electromechanical factor($K_{p}$ ) and mechanical quality factor($Q_{m}$ ) were measured. The Curie temperature of SBN(SBT) rose from $414^{\circ}C$(314$^{\circ}C$) to $494^{\circ}C$(426$^{\circ}C$) when Sr/Bi content ratio was increased. In the case of Sr/Bi content ratio = 0.55/2.3, the maximum value of the mechanical quality factor $Q_{m}$ of SBT and SBN were obtained 3320 and 1010, respectively.