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수열합성에 의한 $Pb(Mn_{1/3} Sb_{2/3})_{0.08} Ti_{0.495}Zr_{0.425}O_3$ 계의 분말제조 및 4K_P$ 특성
이명교,홍창희 한국세라믹학회 1986 한국세라믹학회지 Vol.23 No.3
Formation of powders and electromechanical coupling factor of $Pb(Mn_{1/3} Sb_{2/3})_{0.08} Ti_{0.495}Zr_{0.425}O_3$ by hydro-thermal synthesis are described. The hydrothermal reactions each were accomplished at 12$0^{\circ}C$~25$0^{\circ}C$ for 5hours and sintering was accomplished at 1, .20$0^{\circ}C$ for 1hours. The PZT powders by hydrothermal synthesis were formed above 16$0^{\circ}C$ and the forms were cubic types. The ratio of grain size of sintered sample to powder was slowly decreased with the rising of hydrothermal reactino temperature but decreased rapidly above 22$0^{\circ}C$ Sintering density was decreased with the rising of hydrothermal reaction temperature above 16$0^{\circ}C$ but dielectric constant was increased. Electromechanical coupling factor $K_P$ was almost constant at 16$0^{\circ}C$~24$0^{\circ}C$ range and the value of $K_P$ was about 0.43-0.45.
Carbon Black Graft Polymer의 電氣的 特性
李明敎 釜山工業大學校 1981 論文集 Vol.22 No.2
Carbon Black grafted with vinyl monomers or copolymers is called Carbon Black Graft Polymer (C.G) . This can be used as a raw material for stable thick film resistors and sheet heaters as well. Besides, by an appropriate method of preparation under proper conditions it gives resistors with large and stable positive temperature coefficient, which can applied for thermistors and heaters with self temperature control. In this paper, the effects of dimension and thermal conditions such as thermal conductivity, the extend of air convection, resistor-temperature characteristic, and ambient temperature on the voltage-current characteristic of the resistors are discussed.
小數캐리어 MIS Solar Cell의 最小 障壁 높이
李明敎 釜山工業大學校 1981 論文集 Vol.22 No.2
The theory of MIS-barriers heighht and thier electrical characteristics is examined for its application to solar cells. The saturation currents of minority-and majority-carrier MIS Solar Cells have been compared to find the value of the barrier height ?? , where the dominating saturation current changes from a majority-carrier current to a minority-carrier current. For an interfacial oxide layer of 20Å, the value of ?? has been calculated to be in the range 750~800mV, whereas for an oxide layer of 10Å, ?? is found to be about 900~950mV.