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권혁민(Hyuk-Min Kwon),최원호(Won-Ho Choi),한인식(In-Shik Han),구태규(Tae-Gyu Goo),나민기(Min-Ki Na),유욱상(Ook-Sang Yoo),이가원(Ga-Won Lee),이희덕(Hi-Deok Lee) 대한전자공학회 2007 대한전자공학회 학술대회 Vol.2007 No.11
In this paper, we analyzed the mechanisms of gate leakage current for high performance MOSFETs with La-incorporated hafnium oxide. Barrier height and trap energy level are extracted using different temperature. The barrier height (1.115eV) of Schottky emission was similar to previously reported value and the trap energy level (1.133eV) of Frenkel-Poole emission was slightly low than reported value, which may be due to the La-incorporation.