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수열합성법을 이용한 산화아연 나노와이어의 에피택시 성장
함다슬,정병언,양명훈,이종관,최영빈,강현철,Ham, Daseul,Jeong, Byeong Eon,Yang, Myeong Hun,Lee, Jong Kwan,Choi, Young Bin,Kang, Hyon Chol 한국전기전자재료학회 2018 전기전자재료학회논문지 Vol.31 No.7
Epitaxial ZnO nanowires (NWs) were synthesized on sapphire (001) substrates using a hydrothermal process. The effects of the pH value of the precursor solution on the structural and optical properties of the resulting NWs was studied. The epitaxial relationship and the domain matching configuration between the sapphire (001) substrate and the as-grown ZnO NWs were determined using synchrotron X-ray diffraction measurements. The (002) plane of $w{\ddot{u}}rtzite$ ZnO NW grows in the surface normal direction parallel to the sapphire (001) direction. However, three types of in-plane domain matching configurations were observed, such as the on-position, $30^{\circ}$-rotated position, and ${\pm}8.5^{\circ}$-rotated position relative to the on-position, which might be attributed to inheriting the in-plane domain configuration of the ZnO seed layer.
라디오주파수 분말 스퍼터링 방법으로 성장시킨 주석을 도핑한 산화아연 박막의 열처리
이하람 ( Haram Lee ),정병언 ( Byeong Eon Jeong ),양명훈 ( Myeong Hun Yang ),이종관 ( Jong Kwan Lee ),최영빈 ( Young Bin Choi ),강현철 ( Hyon Chol Kang ) 한국열처리공학회 2018 熱處理工學會誌 Vol.31 No.3
We report the post-annealing effect of Sn doped ZnO (ZnO:Sn) thin film grown on sapphire (001) sub-strate using radio-frequency powder sputtering method. During thermal annealing in a vacuum atmosphere, the ZnO:Sn thin film is transformed into a porous thin film. Based on X-ray diffraction, scanning electron microscopy, and energy dispersive X-ray analyses, a possible mechanism for the production of pores is presented. Sn atoms segregate to form clusters that act as catalysts to dissociate Zn-O bonds. The Zn and O atoms subsequently vaporize, leading to the formation of pores in the ZnO:Sn thin film. We also found that Sn clusters were oxidized to form SnO or SnO<sub>2</sub> phases. (Received April 20, 2018; Revised April 27, 2018; Accepted May 4, 2018)