http://chineseinput.net/에서 pinyin(병음)방식으로 중국어를 변환할 수 있습니다.
변환된 중국어를 복사하여 사용하시면 됩니다.
- 中文 을 입력하시려면 zhongwen을 입력하시고 space를누르시면됩니다.
- 北京 을 입력하시려면 beijing을 입력하시고 space를 누르시면 됩니다.
RISS 인기검색어
- 검색키워드
- 저자 : 아소칸 (검색결과 2 건)
- 무료
- 기관 내 무료
- 유료
-
On the Study of the Atomic Structures of Nitrogen-Ion-Implanted InP
santhakumar K,이철로,아소칸,Hayakawa Y,Jayavel p,Tetsuo soga 한국물리학회 2007 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.51 No.2I
Nitrogen ions at doses of 1 $\times$ 10$^{13}$ -- 1 $\times$ 10$^{15}$ cm$^{-2}$ have been implanted in semi-insulating (SI) InP (100) single-crystal substrates. The surface topography of as-grown and implanted samples has been investigated using atomic force microscopy (AFM). The as-grown InP surface has minimum roughness and appears to be smooth. Angstrom-level pits-type defects are seen on the InP surface after the implantation. Root-mean-square roughness values measured for the as-grown and the implanted InP samples. The surface roughness increased with increasing the nitrogen-ion dose monotonically up to 5 $\times$ 10$^{14}$ cm$^{-2}$ and decreased at a dose of 1 $\times$ 10$^{15}$ cm$^{-2}$ the increase in the roughness was due to implantation-induced damages, and the decrease at higher dose 10$^{15}$ cm$^{-2}$ might have been be due to plastic deformation on the surface associated with a surface amorphisation. Post-implantation annealing smoothened the surface. Roughness values decreased relative to the implanted samples up to a dose 5 $\times$ 10$^{14}$ cm$^{-2}$, which indicates that the defects were partially annealed. At a higher dose of 10$^{15}$ cm$^{-2}$, there was no change in roughness value in spite of annealing. This indicates that the InP surface had been plastically deformed leading to amorphization at higher dose. Further, Raman characterization of these implanted samples clearly supports the surface amorphization at higher doses.
-
Jayavel P,Cheul-Ro LEE,아소칸,Haris M,Hayakawa Y,santhakumar k,Tetsuo soga 한국물리학회 2007 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.51 No.2I
The effects of low-energy (110 keV) nitrogen ion (N$^+$) implantation at fluences of 1 $\times$ 10$^{13}$ and 1 $\times$ 10$^{14}$ cm$^{-2}$ in semi-insulating InP samples have been studied using cross sectional scanning tunneling microscopy. The atomically resolved images of the implanted samples reveal lattice disordering and point defects, which are attributed to implantation-induced effects. At fluence of 1 $\times$ 10$^{14}$ cm$^{-2}$, deformation of the atomic structures is observed. Cleaved-edge tunneling spectroscopy of the implanted samples has been carried out under dark conditions. The observed results demonstrate that two components of current are associated with the tunneling characteristics. Furthermore, the N$^+$ implantation is observed to induce extended states in the conduction band in which the tunneling of electrons occur. Our results suggest that low-energy N$^+$ implantation influences the atomic structures and the tunneling spectra of low-conductivity InP.
연관 검색어 추천
이 검색어로 많이 본 자료
활용도 높은 자료
