http://chineseinput.net/에서 pinyin(병음)방식으로 중국어를 변환할 수 있습니다.
변환된 중국어를 복사하여 사용하시면 됩니다.
- 中文 을 입력하시려면 zhongwen을 입력하시고 space를누르시면됩니다.
- 北京 을 입력하시려면 beijing을 입력하시고 space를 누르시면 됩니다.
RISS 인기검색어
- 검색키워드
- 저자 : Salah Ud din Dogar (검색결과 1 건)
-
Salah Ud din Dogar 동국대학교 2017 국내박사
Due to the wide-bandgap nature of Gallium Nitride (GaN) materials, they are very thermally stable, and electronic devices or sensors comprised of GaN can function at high temperatures up to 500 °C. The GaN-based materials are also very stable chemically, and can not be etched by any well-known wet chemical etchant. This makes them the most appropriate for the device operation in chemically harsh environment. Besides, zinc oxide (ZnO) is a large bandgap semiconducting material that reveals exceptional, optical, electrical, catalytic and sensing properties and has several applications in various fields. ZnO is a naturally n-type semiconductor because of the existence of inherent imperfections including O vacancies and Zn interstitials that also strongly contribute to the optical emissions in the visible region. For this reason, great research efforts have been made to expand application fields towards biosensors, solar cells, and ultra violet (UV) sensors. In this dissertation, we first present the effect of rapid thermal annealing for the ZnO seed layers on the growth morphology and crystal orientation of hydrothermal ZnO nanorods (NRs) besides the integration of ZnO nanostructures (NSs) with the AlGaN/GaN high electron mobility transistors (HEMTs) to realize the first active visible blind UV sensor. This incorporation of the exceptional ZnO NSs with excellent characteristics of AlGaN/GaN HEMTs can favor towards the realization of upcoming devices, biosensors, gas sensors and UV sensors etc. with high responsivity and speed. The effect of UV detection through the ZnO NRs results in electrical changes over the gate area in the HEMTs. The operating principle of the ZnO NSs gated AlGaN/GaN HEMT-based UV sensor is based on the unique property of high electron mobility two-dimensional electron gas (2DEG) which is very close to the surface; therefore, the carrier concentration in the channel is very sensitive to the adsorption of foreign elements into the NSs. Any small concentration change of charged elements on the ZnO NSs surface can be produced by the electron-hole pair generation under UV illumination. The conductance of the HEMT is thus changed by the electric potential modulation in the gate region as the charge variation occurs on the NSs of enormously large surface area. The performance of the UV devices has been reported herein in terms of response speed and spectral response.
연관 검색어 추천
이 검색어로 많이 본 자료
활용도 높은 자료
