Gallium arsenide : materials, devices, and circuits

목차 (Table of Contents)

• CONTENTS
• 1. The Physical and Electronic Properties of GaAs / D. R. Wight = 1
• 1.1 Introduction = 1
• 1.2 Lattice properties = 2
• 1.3 Electrical properties = 7
• 1.4 Optical properties = 23
• 2. Growth of Bulk GaAs / C. G. Kirpatrick ; R. T. Chen ; D. E. Holmes ; K. R. Elliott = 39
• 2.1 Introduction = 39
• 2.2 Basics of LEC growth technique = 40
• 2.3 Progress in LEC technology = 43
• 2.4 Application of LEC GaAs to device fabrication = 88
• 2.5 Conclusions = 90
• 3. Epitaxial Growth of GaAs / I. A. Dorrity ; J. D. Grange ; D. K. Wickenden = 95
• 3.1 Introduction = 95
• 3.2 Liquid phase epitaxy = 95
• 3.3 Vapour phase epitaxy = 99
• 3.4 Molecular beam epitaxy = 105
• 3.5 Intercomparison of techniques = 112
• 4. Etching and Surface Preparation of GaAs for Device Fabrication / S. D. Mukherjee ; D. Woodard = 119
• 4.1 Introduction = 119
• 4.2 Wet etching = 123
• 4.3 Anodic etching = 143
• 4.4 Surface preparation = 147
• 4.5 Dry etching = 151
• 4.6 Conclusions = 157
• 5. Ion Implantation and Damage in GaAs / D. V. Morgan ; F. H. Eisen= 161
• 5.1 Introduction = 161
• 5.2 Ion-crystal interaction = 162
• 5.3 Radiation-induced damage and semi-insulating layers = 166
• 5.4 Ion implantation doping of GaAs = 171
• 5.5 Ion-implanted semiconductor devices and integrated circuits = 180
• 5.6 Conclusions = 187
• 6. Metallizations for GaAs Devices and Circuits / C. J. Palmstrom ; D. V. Morgan = 195
• 6.1 Introduction = 195
• 6.2 Electrical properties of metal／GaAs systems = 195
• 6.3 Schottky barrier metals = 206
• 6.4 Ohmic contacts = 219
• 6.5 Conclusions = 253
• 7. Metal-Insulator-GaAs Structures / D. L. Lile = 263
• 7.1 Introduction = 263
• 7.2 The MIS system = 265
• 7.3 Device technology = 276
• 7.4 Device performance = 283
• 7.5 Status = 288
• 8. Transferred Electron Devices / M. J. Howes = 299
• 8.1 The transferred electron device = 299
• 8.2 Electronically tuned oscillators : YIG tuning = 307
• 8.3 Varactor tuned TEOs = 308
• 8.4 Operation of pulsed TEOs = 315
• 8.5 Transferred electron device amplifiers = 321
• 9. GaAs IMPATT Diodes / J. Smith = 331
• 9.1 Introduction = 331
• 9.2 Basic model = 331
• 9.3 Technology = 350
• 9.4 Present performance of GaAs IMPATTS = 354
• 9.5 Future trends = 357
• 10. GaAs MESFETs / B. Turner = 361
• 10.1 Introduction = 361
• 10.2 Fabrication technology, device parameters, and equivalent circuit = 370
• 10.3 GaAs MESFET theory-analytical methods = 383
• 10.4 GaAs MESFET theory-short gates and computer modelling = 394
• 10.5 Low-noise GaAs MESFETS = 400
• 10.6 GaAs power MESFETS = 408
• 10.7 Special MESFET configurations = 417
• 11. GaAs Optoelectronic Devices / D. H. Newman = 429
• 11.1 Introduction = 429
• 11.2 Principles of device operation = 430
• 11.3 Light-emitting diodes = 431
• 11.4 Lasers = 436
• 11.5 Other components = 445
• 12. GaAs Microwave Monolithic Circuits / D. Maki = 453
• 12.1 Introduction = 453
• 12.2 Transmission lines = 454
• 12.3 Lumped elements = 459
• 12.4 Active devices = 473
• 12.5 Integrated circuit processing = 477
• 12.6 Monolithic circuit design = 485
• 12.7 Conclusions = 512
• 13. GaAs Digital Integrated Circuit Technology / B. M. Welch ; R. C. Eden ; F. S. Lee = 517
• 13.1 Introduction = 517
• 13.2 Why GaAs is superior for high-speed digital ICs = 518
• 13.3 Comparison of GaAs device approaches for IC applications = 524
• 13.4 Logic approaches for digital GaAs ICs = 534
• 13.5 GaAs IC fabrication technologies = 545
• 13.6 Performance of GaAs digital ICs = 556
• Index = 575