Applications of silicon-germanium heterostructure devices

목차 (Table of Contents)

• CONTENTS
• PREFACE = xiii
• 1 INTRODUCTION = 1
• 1.1 Evolution of bipolar technology = 5
• 1.2 Heterojunction bipolar transistors = 9
• 1.3 Development of SiGe／SiGeC HBT technology = 13
• 1.4 Heterostructure field-effect transistors = 16
• 1.5 Vertical heterostructure FETs = 18
• 1.6 Optoelectronic devices = 20
• 1.7 Applications of SiGe HBTs = 21
• 1.8 Summary = 25
• Bibliography = 25
• 2 FILM GROWTH AND MATERIAL PARAMETERS = 32
• 2.1 Strained layer epitaxy = 33
• 2.2 Deposition techniques = 42
• 2.2.1 Wafer cleaning = 43
• 2.2.2 Molecular beam epitaxy = 44
• 2.2.3 UHVCVD = 46
• 2.2.4 LRPCVD and RTCVD = 47
• 2.2.5 Very low pressure CVD = 48
• 2.2.6 Remote plasma CVD = 48
• 2.2.7 Atmospheric pressure CVD = 48
• 2.2.8 Solid phase epitaxy = 49
• 2.2.9 SiGeC film growth = 49
• 2.2.10 Strained-Si film growth = 50
• 2.3 Thermal stability of alloy layers = 51
• 2.4 Bandgap and band discontinuity = 52
• 2.4.1 Si／SiGe = 54
• 2.4.2 Si／SiGeC = 56
• 2.4.3 Strained-Si = 58
• 2.5 Mobility = 59
• 2.5.1 Si／SiGe = 59
• 2.5.2 Si／SiGeC = 59
• 2.5.3 Strained-Si = 63
• 2.6 Summary = 64
• Bibliography = 65
• 3 PRINCIPLE OF SIGE HBTS = 73
• 3.1 Energy band = 75
• 3.2 Terminal currents in a SiGe HBT = 77
• 3.3 Transit time = 83
• 3.4 Early voltage = 85
• 3.5 Heterojunction barrier effects = 90
• 3.5.1 Effect of undoped spacer layers = 92
• 3.6 High level injection = 94
• 3.7 High-frequency figures-of-merit = 96
• 3.7.1 Unity gain cut-off frequency, $$f_T$$ = 96
• 3.7.2 Maximum oscillation frequency, $$f_max$$ = 98
• 3.8 Breakdown voltage, B$$V_ceo$$ = 99
• 3.9 Summary = 100
• Bibliography = 100
• 4 DESIGN OF SIGE HBTS = 104
• 4.1 Device modelling = 106
• 4.2 Numerical methods = 108
• 4.3 Material parameters for simulation = 110
• 4.3.1 SiGe : hole mobility = 112
• 4.3.2 SiGe : electron mobility = 113
• 4.3.3 SiGe : bandgap = 115
• 4.3.4 Recombination and carrier lifetime = 117
• 4.4 History of simulation of Site HBTS = 118
• 4.5 Experimental SiGe HBTS = 119
• 4.6 Device design issues = 121
• 4.6.1 Base design = 122
• 4.6.2 Emitter design = 126
• 4.6.3 Collector design = 129
• 4.7 Small-signal ac analysis = 134
• 4.7.1 Small-signal equivalent circuit = 134
• 4.7.2 Evaluation of transit time = 139
• 4.7.3 ECL gate delay = 141
• 4.8 Summary = 145
• Bibliography = 145
• 5 SIMULATION OF SIGE HBTS = 152
• 5.1 Epitaxial-base SiGe HBT(1995) = 155
• 5.2 Double polysilicon self aligned SiGe HBT(1998) = 159
• 5.3 Energy balance simulation = 162
• 5.4 SiGe HBTS on SOI substrates = 166
• 5.5 Low-temperature simulation = 172
• 5.5.1 Low-temperature SiGe HBTs = 173
• 5.5.2 Low-temperature simulation using ATLAS = 175
• 5.6 I²L circuits using SiGe HBTs = 180
• 5.7 Noise performance = 182
• 5.8 Radiation effects on SiGe HBTs = 186
• 5.8.1 Low dose-rate effects = 189
• 5.8.2 Simulation of radiation hardness = 190
• 5.9 Summary = 192
• Bibliography = 192
• 6 STRAINED-SI HETEROSTRUCTURE FETS = 196
• 6.1 Mobility in strained-Si = 198
• 6.1.1 Theoretical mobility = 198
• 6.1.2 Experimental mobility = 200
• 6.2 Band structure of strained-Si = 203
• 6.3 Device applications = 204
• 6.3.1 Strained-Si n-MOSFETs = 206
• 6.3.2 Strained-Si p-MOSFETs = 209
• 6.4 Simulation of strained-Si HFETs = 213
• 6.5 MODFETs = 217
• 6.6 Heterojunction Si／SiGe CMOS = 226
• 6.7 Summary = 231
• Bibliography = 232
• 7 SIGE HETEROSTRUCTURE FETS = 238
• 7.1 HFETs : structures and operation = 241
• 7.1.1 Experimental HFETs = 242
• 7.2 Design of SiGe p-HFETs = 245
• 7.2.1 SiGe : MOS capacitor simulation = 245
• 7.2.2 Si-cap／oxide thickness variation = 246
• 7.2.3 Germanium mole fraction = 247
• 7.2.4 Choice of gate material = 249
• 7.2.5 Current-voltage characteristics = 250
• 7.2.6 δ-doped p-HFETs = 252
• 7.3 SiGe p-HFETs on SOI = 254
• 7.4 SiGeC p-HFETs = 257
• 7.5 Devices using poly-SiGe = 259
• 7.5.1 Poly-SiGe gate MOSFETs = 260
• 7.5.2 Poly-SiGe thin-film transistors = 261
• 7.6 Vertical FETS = 263
• 7.6.1 Vertical SiGe HFETs = 263
• 7.7 Noise in p-HFETs = 265
• 7.8 Summary = 267
• Bibliography = 268
• 8 METALLIZATION AND HETEROSTRUCTURE SCHOTTKY DIODES = 272
• 8.1 Deposition of metal films = 274
• 8.2 Fabrication of Schottky diodes = 276
• 8.3 Silicidation of group Ⅳ alloy films = 276
• 8.4 Silicidation with titanium = 278
• 8.4.1 Rutherford backscattering characterization = 279
• 8.4.2 Auger electron spectroscopy characterization = 282
• 8.4.3 Sheet resistivity = 284
• 8.5 Silicidation using Pt and Pd = 285
• 8.6 Heterostructure Schottky diodes = 287
• 8.7 Schottky diodes on strained-S$$i_{1-x}$$G$$e_x$$ = 291
• 8.7.1 Barrier height and ideality factor = 293
• 8.7.2 Interface state density distribution = 300
• 8.8 Schottky diodes on strained-Si = 303
• 8.9 Summary = 305
• Bibliography = 307
• 9 SIGE OPTOELECTRONIC DEVICES = 310
• 9.1 Optoelectronic devices in silicon = 315
• 9.1.1 p-n junction photodiode = 316
• 9.1.2 Schottky barrier photodiode = 317
• 9.1.3 p-i-n photodetectors = 318
• 9.1.4 Metal-semiconductor-metal photodetectors = 318
• 9.2 Optical properties of SiGe and SiGeC films = 321
• 9.3 Optical devices using SiGe alloys = 325
• 9.4 Optical devices with SiGeC and GeC alloys = 334
• 9.5 Simulation of optoelectronic devices = 336
• 9.5.1 PtSi／SiGe Schottky photodetectors = 338
• 9.5.2 SiGe p-i-n photodetectors = 341
• 9.5.3 MSM photodetectors = 345
• 9.5.4 SiGe／Si waveguide photodetectors = 350
• 9.6 Summary = 352
• Bibliography = 353
• 10 RF APPLICATIONS OF SIGE HBTS = 359
• 10.1 SiGe : perspective for wireless communication = 363
• 10.2 Technology comparison = 367
• 10.3 MOS versus bipolar = 369
• 10.4 SiGe BiCMOS technology = 375
• 10.5 RF circuits = 378
• 10.5.1 Low-noise amplifiers = 378
• 10.5.2 Power amplifiers = 381
• 10.5.3 VCOs and frequency synthesizers = 384
• 10.6 Passive components = 386
• 10.7 Commercially available products = 388
• 10.7.1 TEMIC Semiconductors = 388
• 10.7.2 IBM = 390
• 10.8 Summary = 392
• Bibliography = 392
• INDEX = 397