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    Low-power digital VLSI design : circuits and systems

    한글로보기

    https://www.riss.kr/link?id=M268111

    • 저자
    • 발행사항

      Boston : Kluwer Academic Publishers, c1995

    • 발행연도

      1995

    • 작성언어

      영어

    • 주제어
    • DDC

      621.39/5 판사항(20)

    • ISBN

      0792395875 (alk. paper)

    • 자료형태

      일반단행본

    • 발행국(도시)

      Massachusetts

    • 서명/저자사항

      Low-power digital VLSI design : circuits and systems / by Abdellatif Bellaouar and Mohamed I. Elmasry.

    • 형태사항

      xv, 530 p. : ill. ; 25 cm.

    • 일반주기명

      Includes bibliographical references and index.

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    목차 (Table of Contents)

    • CONTENTS
    • Preface = xiii
    • 1 LOW-POWER VLSI DESIGN : AN OVERVIEW = 1
    • 1.1 Why Low-Power? = 1
    • 1.2 Low-Power Applications = 3
    • CONTENTS
    • Preface = xiii
    • 1 LOW-POWER VLSI DESIGN : AN OVERVIEW = 1
    • 1.1 Why Low-Power? = 1
    • 1.2 Low-Power Applications = 3
    • 1.3 Low-Power Design Methodology = 4
    • 1.3.1 Power Reduction Through Process Technology = 4
    • 1.3.2 Power Reduction Through Circuit/Logic design = 6
    • 1.3.3 Power Reduction Through Architectural Design = 7
    • 1.3.4 Power Reduction Through Algorithm Selection = 7
    • 1.3.5 Power Reduction in System Integration = 7
    • 1.4 This Book = 7
    • 1.4.1 Low-Voltage Process Technology = 8
    • 1.4.2 Low-Voltage Device Modeling = 8
    • 1.4.3 Low-Voltage Low-Power VLSI CMOS Circuit Design = 9
    • 1.4.4 Low-Voltage VLSI BiCMOS Circuit Design = 9
    • 1.4.5 Low-Power CMOS Random Access Memory Circuits = 10
    • 1.4.6 VLSI CMOS SubSystem Design = 10
    • 1.4.7 Low-Power VLSI Design Methodology = 10
    • REFERENCES = 11
    • 2 LOW-VOLTAGE PROCESS TECHNOLOGY = 13
    • 2.1 CMOS Process Technology = 13
    • 2.1.1 N-well CMOS Process = 14
    • 2.1.2 Twin-Tub CMOS Process = 16
    • 2.1.3 Low-Voltage CMOS Technology = 17
    • 2.2 Bipolar Process Technology = 21
    • 2.3 Isolation in CMOS and Bipolar Technologies = 27
    • 2.3.1 CMOS Device Isolation Techniques = 27
    • 2.3.2 Bipolar Device Isolation Techniques = 31
    • 2.4 CMOS and Bipolar Processes Convergence = 34
    • 2.5 BiCMOS Technology = 36
    • 2.5.1 Example 1 : Low-Cost BiCMOS Process = 37
    • 2.5.2 Example 2 : Medium-Performance BiCMOS Process = 37
    • 2.5.3 Example 3 : High-Performance BiCMOS Process = 40
    • 2.6 Complementary BiCMOS Technology = 43
    • 2.7 BiCMOS Design Rules = 44
    • 2.8 Silicon On Insulator = 52
    • 2.9 Chapter Summary = 56
    • REFERENCES = 57
    • 3 LOW-VOLTAGE DEVICE MODELING = 63
    • 3.1 MOSFET Structure and Operation = 63
    • 3.2 SPICE Models of the MOS Transistor = 69
    • 3.2.1 The Simple MOS DC Model = 69
    • 3.2.2 Semi-Empirical Short-Channel Model (LEVEL 3) = 73
    • 3.2.3 BSIM Model (LEVEL 4) = 77
    • 3.2.4 MOS Capacitances = 82
    • 3.3 CMOS Low-Voltage Analytical Model = 84
    • 3.3.1 Threshold Voltage Definitions = 85
    • 3.3.2 Subthreshold Current = 86
    • 3.3.3 Low-Voltage Drain Current = 87
    • 3.4 CMOS Power Supply Voltage Scaling = 89
    • 3.5 Modeling of the Bipolar Transistor = 91
    • 3.5.1 BJT Structure and Operation = 91
    • 3.5.2 Ebers-Moll Model = 94
    • 3.5.3 Bipolar Models in SPICE = 101
    • 3.5.4 Chapter Summary = 109
    • REFERENCES = 111
    • 4 LOW-VOLTAGE LOW-POWER VLSI CMOS CIRCUIT DESIGN = 115
    • 4.1 CMOS Inverter : DC Characteristics = 116
    • 4.1.1 Transfer Characteristics = 117
    • 4.1.2 Effect of β = 121
    • 4.1.3 Noise Margins = 121
    • 4.1.4 Minimum Power Supply = 123
    • 4.1.5 Example of Noise Margins = 123
    • 4.2 CMOS Inverter : Switching Characteristics = 124
    • 4.2.1 Analytic Delay Models = 125
    • 4.2.2 Delay Characterization with SPICE = 127
    • 4.3 Power Dissipation = 129
    • 4.3.1 Static Power = 130
    • 4.3.2 Dynamic Power of the Output Load = 132
    • 4.3.3 Short-Circuit Power Dissipation = 135
    • 4.3.4 Other Power Issues = 138
    • 4.4 Capacitance Estimation = 138
    • 4.4.1 Estimation of $$C_{in}$$ = 139
    • 4.4.2 Parasitic Capacitances = 141
    • 4.4.3 Wiring Capacitance = 143
    • 4.4.4 Example = 144
    • 4.5 CMOS static Logic Design = 146
    • 4.5.1 NAND/NOR Gates = 146
    • 4.5.2 Complex CMOS Logic Gates = 149
    • 4.5.3 Switching Activity Concept = 152
    • 4.5.4 Switching Activity of Static CMOS Gates = 152
    • 4.5.5 Glitching Power = 160
    • 4.5.6 Basic Physical Design = 161
    • 4.5.7 Physical Design Methodologies = 165
    • 4.5.8 Conventional CMOS Pass-Transistor Logic = 169
    • 4.5.9 CMOS Static Latch = 174
    • 4.6 CMOS Logic Styles = 176
    • 4.6.1 Pseudo-NMOS CMOS Logic = 176
    • 4.6.2 Dynamic CMOS Logic = 177
    • 4.6.3 Design Style Comparison = 184
    • 4.6.4 Clock Skew in Dynamic Logic = 187
    • 4.7 Clocking = 188
    • 4.7.1 Storage Elements = 190
    • 4.7.2 Single-Phase Clocking = 198
    • 4.7.3 Two-Phase Clocking = 202
    • 4.8 Pass-Transistor Logic Families = 203
    • 4.8.1 CPL = 203
    • 4.8.2 DPL = 207
    • 4.8.3 Modified CPL = 210
    • 4.8.4 Pass-Transistor Logics Comparison = 213
    • 4.9 I/O Circuits = 214
    • 4.9.1 Input Circuits = 214
    • 4.9.2 Schmitt Trigger = 218
    • 4.9.3 CMOS Buffer Sizing = 221
    • 4.9.4 Clock Drivers and Clock Distribution = 224
    • 4.9.5 Output Circuits = 227
    • 4.9.6 Ground Bounce = 233
    • 4.9.7 Low-Swing Output Circuit = 236
    • 4.10 Low-Power Circuit Techniques = 239
    • 4.10.1 Low Static Power Techniques = 239
    • 4.10.2 Low Dynamic Power Techniques = 245
    • 4.11 Adiabatic Computing = 247
    • 4.12 Chapter Summary = 249
    • REFERENCES = 251
    • 5 LOW-VOLTAGE VLSI BICMOS CIRCUIT DESIGN = 257
    • 5.1 Conventional BiCMOS Logic = 257
    • 5.1.1 DC Characteristics = 259
    • 5.1.2 Transient Switching Characteristics = 260
    • 5.1.3 CMOS and BiCMOS Comparison = 266
    • 5.1.4 Power Dissipation = 266
    • 5.1.5 Full-Swing with Shunting Devices = 268
    • 5.1.6 Power Supply Voltage Scaling = 270
    • 5.2 BiNMOS Logic Family = 272
    • 5.2.1 BiNMOS Gate Design = 274
    • 5.2.2 CMOS and BiNMOS Comparison = 277
    • 5.2.3 BiNMOS Logic Gates = 277
    • 5.2.4 Power Supply Voltage Scaling = 278
    • 5.3 Low-Voltage BiCMOS families = 280
    • 5.3.1 Merged and Quasi-Complementary BiCMOS Logic = 281
    • 5.3.2 Emitter Follower Complementary BiCMOS Circuits = 283
    • 5.3.3 Full-Swing Common-Emitter Complementary BiCMOS Circuits = 284
    • 5.3.4 Bootstrapped BiCMOS = 287
    • 5.3.5 Comparison of BiCMOS Logic Circuits = 294
    • 5.3.6 Conclusion = 298
    • 5.4 Low-Voltage BiCMOS Applications = 299
    • 5.4.1 Microprocessors and Logic Circuits = 299
    • 5.4.2 Random Access Memories (RAMs) = 300
    • 5.4.3 Digital Signal Processors = 303
    • 5.4.4 Gate Arrays = 304
    • 5.4.5 Application Specific ICs (ASICs) = 306
    • 5.5 Chapter Summary = 307
    • REFERENCES = 309
    • 6 LOW-POWER CMOS RANDOM ACCESS MEMORY CIRCUITS = 313
    • 6.1 Static RAM (SRAM) = 313
    • 6.1.1 Basics of SRAMs = 314
    • 6.1.2 Static RAM Cells = 318
    • 6.1.3 Read/Write Operation = 324
    • 6.1.4 Low-Power Techniques = 330
    • 6.1.5 Address Transition Detector (ATD) Circuit = 332
    • 6.1.6 Decoders = 332
    • 6.1.7 Bit-line Conditioning Circuitry = 337
    • 6.1.8 Sense Amplifier = 339
    • 6.1.9 Output Latch = 347
    • 6.1.10 Hierarchical Word-Line for Low-Power Memory = 348
    • 6.1.11 Low-Voltage SRAM Operation and Circuitry = 352
    • 6.2 Dynamic RAM = 356
    • 6.2.1 Basics of a DRAM = 358
    • 6.2.2 DRAM Memory Cell = 359
    • 6.2.3 Read/Write Circuitry = 363
    • 6.2.4 Low-Power Techniques = 364
    • 6.2.5 Decoder = 366
    • 6.2.6 Sense Amplifier = 367
    • 6.2.7 Bit-Line Capacitance Reduction = 367
    • 6.2.8 Multi-Divided Word-Line = 367
    • 6.2.9 Half-voltage Generator = 371
    • 6.2.10 Back-Bias Generator = 373
    • 6.2.11 Boosted Voltage Generator = 377
    • 6.2.12 Self-Refresh Technique = 377
    • 6.2.13 Low-Voltage DRAM Operation and Circuitry = 381
    • 6.3 On-Chip Voltage Down Converter = 389
    • 6.3.1 Driver Design Issues = 394
    • 6.3.2 Reference Voltage Generator = 395
    • 6.4 Chapter Summary = 399
    • REFERENCES = 403
    • 7 VLSI CMOS SUBSYSTEM DESIGN = 409
    • 7.1 Parallel Adders = 409
    • 7.1.1 Ripple Carry Adders = 410
    • 7.1.2 Carry Look-Ahead Adders = 412
    • 7.1.3 Carry-Select Adder = 420
    • 7.1.4 Conditional Sum Adders = 423
    • 7.1.5 Adder's Architectures Comparison = 425
    • 7.2 Parallel Multipliers = 428
    • 7.2.1 Braun Multiplier = 429
    • 7.2.2 Baugh-Wooley Multiplier = 432
    • 7.2.3 The Modified Booth Multiplier = 434
    • 7.2.4 Wallace Tree = 442
    • 7.2.5 Multiplier's Comparison = 450
    • 7.3 Data Path = 450
    • 7.3.1 Arithmetic Logic Unit = 451
    • 7.3.2 Absolute Value Calculator = 454
    • 7.3.3 Comparator = 455
    • 7.3.4 Shifter = 456
    • 7.3.5 Register File = 458
    • 7.4 Regular Structures = 460
    • 7.4.1 Programmable Logic Array = 462
    • 7.4.2 Read Only Memory = 467
    • 7.4.3 Content Addressable Memory = 470
    • 7.5 Phase Locked Loops = 473
    • 7.5.1 Charge-Pumped PLL = 474
    • 7.5.2 PLL Circuit Design = 476
    • 7.5.3 Low-Power Design = 482
    • 7.6 Chapter Summary = 484
    • REFERENCES = 485
    • 8 LOW-POWER VLSI DESIGN METHODOLOGY = 489
    • 8.1 LP Physical Design = 489
    • 8.1.1 Floorplanning = 490
    • 8.1.2 Placement and Routing = 490
    • 8.2 LP Gate-Level Design = 490
    • 8.2.1 Logic Minimization and Technology Mapping = 490
    • 8.2.2 Spurious Transitions Reduction = 493
    • 8.2.3 Precomputation-Based Power Reduction = 496
    • 8.3 LP Architecture-Level Design = 498
    • 8.3.1 Parallelism = 498
    • 8.3.2 Pipelining = 500
    • 8.3.3 Distributed Processing = 502
    • 8.3.4 Power Management = 505
    • 8.4 Algorithmic-Level Power Reduction = 507
    • 8.4.1 Switched Capacitance Reduction = 507
    • 8.4.2 Switching Activity Reduction = 508
    • 8.5 Power Estimation Techniques = 510
    • 8.5.1 Circuit-Level Tools = 510
    • 8.5.2 Gate-Level Techniques = 512
    • 8.5.3 Architecture-Level Power Estimation = 516
    • 8.5.4 Behavioral-Level Power Estimation = 522
    • 8.6 Chapter Summary = 522
    • REFERENCES = 523
    • INDEX = 527
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