The semiconductor industry has made great progress in recent decades and is being used as an essential part to play a role in data storage processing transmission such as smartphones, TVs, and computers that are indispensable in our daily lives. Among...
The semiconductor industry has made great progress in recent decades and is being used as an essential part to play a role in data storage processing transmission such as smartphones, TVs, and computers that are indispensable in our daily lives. Among them, CVD (Chemical Vapor Deposition) technology supplies a thin film material to be formed on the substrate and performs chemical reaction by plasma on the surface of the substrate. However, due to temperature and plasma exposure, CVD equipments is damaged and leakage accidents occur frequently. Among them, the O-ring used to seal parts is important, and damage, leakage, and poor operation of the FFKM (Perfluoroelastomer) O-ring due to plasma exposure are leading to a decline in wafer quality, reduced productivity and safety issues. The purpose is to analyze and understand factors that affect life and performance to prevent productivity degradation and safety problems due to leakage or malfunction caused by damage to FFKM O-ring, one of the components used in high temperature environments and plasma conditions. We checked the physical changes of perfluorine O-ring due to temperature, such as weight, linear expansion rate, tensile strength, and permanent compression deformation, and confirmed how it affects performance. We checked the physical changes of the perfluorine ring due to plasma: weight, cross-sectional changes, tensile strength, and permanent compression deformation. When measuring weight changes due to temperature changes, perfluorine O-rings did not affect temperature, given that there was no change in weight and there was no significant difference in tensile strength and elongation. The change in the weight of perfluorine O-ring for plasma was found to have more surface etching of FFKM O-ring than O2 plasma for NF3 plasma. Depending on the exposure time to plasma, etching of the O-ring surface is also found to be worse, making the surface uneven and changing weight significantly. The linear expansion change of the perfluorine ring for plasma is also fine, but physical property changes are found to increase as the temperature rises. Experiments have shown that the tensile strength of perfluorine rings for plasma increases and the tensile rate decreases. The biggest change due to plasma is the change in weight, and managing the change in weight will make it easy to predict the life of perfluorine rings. To reduce O-ring etching on plasma, it can be used more effectively by making steps between O-rings to minimize the impact of plasma, or by inserting a Teflon plate that can withstand high temperatures and plasma during gas and plasma generation. These results will provide information to support material selection and component design depending on the environment in which FFKM O-ring, one of the components used in high temperature and plasma conditions, prevent physical human damage caused by gas and liquid leakage.