Enhanced Detectivity in Quantum Dot Photodetectors through P-type Ink and Atomic Layer Deposition Integration

목차 (Table of Contents)

• Table of Contents i
• List of Figures ii
• List of Schemes iv
• Abstract v
• Chapter 1. Introduction 1
• Chapter 2. Materials and Methods 3
• 2.1 Materials 3
• 2.2 Synthesis 3
• 2.3 Device Fabrication 4
• 2.4 Characterization 5
• Chapter 3. Result and Discussion 7
• 3.1 Solution-phase ligand exchange for P-type PbS QD 7
• 3.2 P-type ink formation for QD films 10
• 3.3 Atomic layer deposition for solvent orthogonality 12
• 3.4 Optical properties comparison using optical simulation 16
• 3.5 Device performance depending on HTL fabrication method 18
• 3.6 Device performance depending on HTL thickness 19
• Chapter 4. Conclusion 26
• Chapter 5. References 27
• 국문요지 29