The SiC films were deposited on Si substrate by the decomposition of CH_(3)SiCl_(3) (methylthrichlorosilane) molecules in a high frequency discharge field. From the Raman spectra, it is conjectured that the deposited film are formed into the polycryst...
The SiC films were deposited on Si substrate by the decomposition of CH_(3)SiCl_(3) (methylthrichlorosilane) molecules in a high frequency discharge field. From the Raman spectra, it is conjectured that the deposited film are formed into the polycrystalline structure. The photon absorption measurement reveal that the band gap of the electron energy state are to be 2.4 eV for SiC, and 2.6 eV for Si_(0.4)Co_(0.6), respectively. In the high power density regime, methyl-radicals decompose easily and increases the carbon concentration in plasma and result in the growing films.